Liquid crystal display device and method of fabricating the same

1. A liquid crystal display device, comprising:

a liquid crystal display panel;

a pixel region and a driving circuit region;

a driving circuit on a liquid crystal display panel supplying a driving signal to the liquid crystal display panel; and

a switching device located in the driving circuit region and including a plurality of thin film transistor groups connected substantially in parallel with a gate line, a source line and a drain line,

wherein each thin film transistor group includes a plurality of thin film transistors connected substantially in parallel with a gate electrode branched from the gate line, a source electrode branched from the source line, and a drain electrode branched from the drain line,

wherein the plurality of thin film transistors include a single semiconductor pattern overlapping the gate electrode, the semiconductor pattern non-overlapping the gate line, the source line and the drain line, and being independently formed in the each thin film transistor group,

wherein the source electrode comprises alternately arranged convex-source portions and concave-source portions,

wherein the drain electrode comprises alternately arranged convex-drain portions opposite to the convex-source portions, and concave-drain portions opposite to the concave-source portions,

wherein the gate electrode and the semiconductor pattern overlaps only the convex-source portions and the convex-drain portions,

wherein the single semiconductor pattern includes channels respectively formed only between the convex-source portions and the convex-drain portions, the channels disconnected from each other through the single semiconductor pattern.

2. The device according to claim 1 , wherein the switching device is formed on a multiplexer of a data driving region of the liquid crystal display panel.

3. The device according to claim 1 , wherein the driving circuit includes a gate driving circuit.

4. A liquid crystal display device, comprising:

a liquid crystal display panel;

a pixel region and a driving circuit region;

a driving circuit on a liquid crystal display panel supplying a driving signal to the liquid crystal display panel; and

a switching device located in the driving circuit region and including a plurality of thin film transistor groups connected substantially in parallel with a gate line, a source line and a drain line,

wherein each thin film transistor group includes a plurality of thin film transistors connected substantially in parallel with a gate electrode branched from the gate line, a source electrode branched from the source line, and a drain electrode branched from the drain line,

wherein the plurality of thin film transistors include a plurality of semiconductor patterns, separated from each other, non-overlapping the gate line, the source line and the drain line,

wherein the source electrode comprises alternately arranged convex-source portions and concave-source portions,

wherein the drain electrode comprises alternately arranged convex-drain portions opposite to the convex-source portions, and concave-drain portions opposite to the concave-source portions,

wherein the gate electrode and the semiconductor patterns overlaps only the convex-source portions and the convex-drain portions,

wherein the semiconductor patterns respectively have channels formed only between the convex-source portions and the convex-drain portions,

wherein each semiconductor pattern has a larger width than a width of each of the convex-source portions and the convex-drain portions, so that the channel width of the each semiconductor pattern is the same as the width of each of each of the convex-source portions and the convex-drain portions.

5. A liquid crystal display device, comprising:

a driving circuit provided with a switching device on a liquid crystal display panel, the switching device including a plurality of thin film transistor groups connected substantially in parallel with a gate line, a source line and a drain line,

wherein each thin film transistor group includes a plurality of thin film transistors connected substantially in parallel with a gate electrode branched from the gate line, a source electrode branched from the source line, and a drain electrode branched from the drain line,

wherein the plurality of thin film transistors include a single semiconductor pattern overlapping the gate electrode, the semiconductor pattern non-overlapping the gate line, the source line and the drain line, and being independently formed in the each thin film transistor group,

wherein the source electrode comprises alternately arranged convex-source portions and concave-source portions,

wherein the drain electrode comprises alternately arranged convex-drain portions opposite to the concave-source portions, and concave-drain portions opposite to the convex-source portions,

wherein the single semiconductor pattern includes a plurality of narrow channels respectively formed between the concave-drain portions and the convex-source portions, and between the convex-drain portions and the concave-source portions,

wherein a plurality of holes penetrating through the single semiconductor pattern in order for the narrow channels to be separated from the each other, so that the narrow channels are disconnected from each other through the single semiconductor pattern.