High-frequency heating device, semiconductor manufacturing device, and light source device
A high-frequency heating device including: a solid-state oscillator that generates a microwave; an amplifier that amplifies the microwave generated by the solid-state oscillator; an isolator that is connected to a stage subsequent to the amplifier and blocks a reflected wave directed from an object exposed with the microwave; an antenna that irradiates the microwave toward the object; and a metal cavity that traps therein the microwave irradiated to the object.
1. A light source device, comprising:
a solid-state oscillator that generates a microwave;
an amplifier that amplifies the microwave generated by the solid-state oscillator;
an isolator that is connected to a stage subsequent to the amplifier, the isolator blocking a reflected wave coming from a noble gas exposed with the microwave;
a glass tube filled with the noble gas and spaced apart and separated from each of the oscillator, the amplifier, and the isolator, the glass tube including a bulging portion having a metal mesh; and
an antenna that is placed in the bulging portion of the glass tube, and irradiates the microwave toward the noble gas;
wherein the isolator is disposed between the amplifier and the glass tube.
2. The light source device of claim 1 , wherein:
the solid-state oscillator includes a surface acoustic wave resonator incorporated in an oscillator loop.
3. The light source device according to claim 2 , wherein the surface acoustic wave resonator includes:
a thin-film piezoelectric layer placed over a diamond layer or over a carbon film layer having an elastic constant substantially equal to that of polycrystalline diamond; and
an IDT electrode formed on the thin-film piezoelectric layer.
4. The light source device according to claim 2 , wherein the surface acoustic wave resonator includes:
a thin-film piezoelectric layer placed over a monocrystalline diamond layer or a hard carbon film having an elastic constant close to that of polycrystalline diamond;
an IDT electrode formed on the thin-film piezoelectric layer; and
a silicon oxide film formed on the IDT electrode.
5. The light source device according to claim 2 , further comprising:
an equal divider that equally divides an electric power in the oscillator loop for output to an outside of the oscillator loop; and
a phase shifter that varies a phase in the oscillator loop.
6. The light source device according to claim 1 , wherein
the antenna is a unidirectional planar antenna or a phased array antenna.
7. The light source device according to claim 1 , further comprising:
a progressive wave/reflected wave detection unit that detects progressive wave power to be directed to the antenna, and reflected wave power to be returned from the antenna; and
an operation unit that exercises control over the microwave coming from the antenna based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit.
8. The light source device according to claim 7 , wherein
based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit, the operation unit exercises control over at least one of an oscillation frequency of the solid-state oscillator, a presence or absence of an output of the solid-state oscillator, or an amplification level of the amplifier.
9. The light source device according to claim 7 , further comprising a matching unit that is placed at a stage subsequent to the progressive wave/reflected wave detection unit for impedance matching with a load, wherein
the operation unit exercises control over the matching unit based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit.
10. The light source device according to claim 1 , wherein
the antenna is plurally provided in the glass tube, and
a power splitter that controls power allocation to the antenna is placed at a stage subsequent to the isolator.