Semiconductor light-emitting element and method of manufacturing the same

1. A semiconductor light-emitting element, comprising:

an n-type cladding layer;

a light guide layer positioned on the n-type cladding layer;

a multiple quantum well structure active layer positioned on the light guide layer;

a p-type carrier overflow prevention layer positioned on the active layer and having an impurity concentration of 5×10 18 cm −3 to not more than 3×10 19 cm −3 ;

a single p-type light guide layer positioned directly on the p-type carrier overflow prevention layer, an entire region of the single p-type light guide layer having an impurity concentration of 1×10 18 cm −3 or more and less than that of the p-type carrier overflow prevention layer; and

a p-type cladding layer positioned directly on the single p-type light guide layer and having a band gap narrower than the p-type carrier overflow prevention layer,

wherein of the n-type cladding layer, the light guide layer, the multiple quantum well structure active layer, the p-type carrier overflow prevention layer, the single p-type light guide layer, and the p-type cladding layer, only the p-type cladding layer has a ridge potion, and

wherein the n-type cladding layer and the p-type cladding layer each have a composition Al v Ga 1−v N (0.0 <v≦0.3) or a superlattice of a composition Al v Ga 1−v N/GaN (0.0<v≦0.3), the light guide layer has a composition In w Ga 1−w N (0.0≦w≦1.0), the active layer has a composition In x Ga 1−x N/In y Ga 1−y N (0.05≦x≦1.0, 0.0≦y), the single p-type light guide layer has a composition GaN, and the p-type carrier overflow prevention layer has a composition Al z Ga 1−z N (z >v).

2. The semiconductor light-emitting element as set forth in claim 1 , further comprising an n-type carrier overflow prevention layer positioned between the light guide layer and the active layer, wherein the light guide layer is an n type, and the n-type carrier overflow prevention layer has a band gap wider than the n-type cladding layer.

3. The semiconductor light-emitting element as set forth in claim 1 , wherein the light guide layer is an n type, and has a layered structure whose impurity concentration increases in a portion closer to the active layer.

4. The semiconductor light-emitting element as set forth in claim 1 , wherein an n-type substrate is disposed on the n-type cladding layer on a side opposite to the light guide layer.

5. The semiconductor light-emitting element as set forth in claim 1 , wherein the impurity in the p-type carrier overflow prevention layer is magnesium.

6. The semiconductor light-emitting element as set forth in claim 1 , wherein the impurity in the single p-type light guide layer is magnesium.

7. The semiconductor light-emitting element as set forth in claim 1 , wherein the p-type carrier overflow prevention layer has a thickness of 10 nm to 30 nm.

8. The semiconductor light-emitting element as set forth in claim 1 , wherein the single p-type light guide layer has a thickness of 50 nm to 200 nm.

9. The semiconductor light-emitting element as set forth in claim 1 , wherein the impurity in the n-type cladding layer is silicon.

10. The semiconductor light-emitting element as set forth in claim 1 , wherein the p-type cladding layer has an impurity concentration of approximately 5 ×10 18 cm −3 .

11. The semiconductor light-emitting element as set forth in claim 1 , wherein the light guide layer has an n-type impurity.

12. The semiconductor light-emitting element as set forth in claim 1 , wherein the multiple quantum well structure active layer has a laminated structure of 2.5 pairs to 5.5 pairs of quantum well layers and barrier layers.

13. The semiconductor light-emitting element as set forth in claim 12 , wherein the quantum well layer each has a thickness of 2 nm to 8 nm.

14. The semiconductor light-emitting element as set forth in claim 12 , wherein the barrier layer each has a thickness of 4 nm to 10 nm.

15. The semiconductor light-emitting element as set forth in claim 1 , wherein a dielectric film is formed on a top surface of the p-type cladding layer and on side surfaces of the ridge portion.

16. The semiconductor light-emitting element as set forth in claim 1 , wherein the ridge portion of the p-type cladding layer has a width of 1.5 μm to 3 μm.

17. The semiconductor light-emitting element as set forth in claim 1 , wherein the p-type cladding layer has a thickness of 50 nm to 400 nm excepting the ridge portion thereof.

18. The semiconductor light-emitting element as set forth in claim 1 , further comprising a p-type GaN layer positioned on the ridge portion of the p-type cladding layer.