Atomic layer deposition using metal amidinates
Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) N,N′-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N′-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.
1. A composition of matter that is a volatile metal(III) tris(amidinate) represented by the general formula
or oligomers thereof, wherein the metal M″ is selected from lanthanum, praseodymium and the other lanthanide metals, yttrium, scandium, titanium, vanadium, chromium, iron, ruthenium, cobalt, rhodium, iridium, and bismuth, and wherein R 1 , R 1′ , R 1″ , R 2 , R 2′ , and R 2″ independently represent alkyl groups, alkenyl groups, alkynyl groups, trialkylsilyl groups, or other non-metal atoms or groups that are not aryl, and R 3 , R 3′ , and R 3″ independently represent hydrogen, alkyl groups, alkenyl groups, alkynyl groups, trialkylsilyl groups, or other non-metal atoms or groups that are not aryl.
2. A composition of matter as in claim 1 having the chemical name lanthanum(III) tris(N,N′-diisopropylacetamidinate) and structural formula
3. The composition of matter as claimed in claim 1 , wherein R 1 , R 1′ , R 1″ , R 2 , R 2′ , R 2″ , R 3 , R 3′ , and R 3″ independently represent unsubstituted alkyl groups.
4. The composition of matter as claimed in claim 1 , wherein R 1 , R 1′ , R 1″ , R 2 , R 2′ , R 2″ , R 3 , R 3′ , and R 3″ independently represent alkyl groups substituted with fluorine or other non-metal atoms.
5. A process for forming a thin film comprising a transition metal or a lanthanide metal, the process comprising:
exposing one or more volatile metal amidinate compounds of claim 1 to a substrate.
6. The process of claim 5 , further comprising:
exposing a reducing gas to the substrate.
7. The process of claim 6 , wherein the reducing gas or vapor is hydrogen.
8. The process of claim 5 , wherein the thin film comprises a metal nitride.
9. The process of claim 8 , further comprising:
exposing a gas comprising nitrogen to the substrate.
10. The process of claim 9 , wherein the gas comprising nitrogen is ammonia.
11. The process of claim 5 , wherein the thin film comprises a metal oxide.
12. The process of claim 11 , farther comprising:
exposing a gas comprising oxygen to the substrate.
13. The process of claim 12 , wherein the gas comprising oxygen is water vapor.
14. A process for forming a thin film comprising a metal, comprising:
exposing a heated substrate alternately to the vapor of one or more volatile metal amidinate compounds of claim 1 , and then to a reducing gas or vapor, to form a metal coating on the surface of the substrate.
15. The process of claim 14 , wherein said reducing gas is hydrogen.
16. A process for forming a thin film comprising a metal nitride, comprising:
exposing a heated substrate alternately to the vapor of one or more volatile metal amidinate compounds of claim 1 , and then to a nitrogen-containing gas or vapor, to form a metal nitride coating on the surface of the substrate.
17. The process of claim 16 , wherein the nitrogen-containing gas is ammonia.
18. A process for forming a thin film comprising a metal oxide, comprising:
exposing a heated substrate alternately to the vapor of one or more volatile metal amidinate compounds of claim 1 , and then to an oxygen-containing gas or vapor, to form a metal oxide coating on the surface of the substrate.
19. The process of claim 18 , wherein the oxygen-containing vapor is water vapor.