Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device
View Patent ↗According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.
1. A crystallization method comprising:
(i) directly or through a base insulating film forming a non-single crystal semiconductor thin film on a substrate;
(ii) forming an insulating film on the non-single crystal semiconductor thin film;
(iii) irradiating the substrate with a laser light having a light intensity distribution of a plurality of inverse peak patterns continuous on an irradiation region of the insulating film;
(iv) forming a crystal grain array, in which each crystal grain crystallized in a longer shape in a crystal growth direction than in a width direction is aligned adjacently in the width direction, on the non-single crystal semiconductor thin film; and
(v) selecting a period T of the light intensity distribution in the range between 4 μm and 80 μm inclusive and controlling a light intensity gradient G.
2. A crystallization method comprising:
(a) directly or through a base insulating film forming a non-single crystal semiconductor thin film on a substrate;
(b) forming an insulating film on the non-single crystal semiconductor thin film;
(c) irradiating the substrate with a laser light under such a condition that a light intensity distribution of the laser light has a plurality of inverse peak patterns continuous on an irradiation surface of the insulating film and, when a relative light intensity of the maximum value in the light intensity distribution of the laser light is defined as 1, a light intensity gradient G is selected in the range of 0.02 μm-1 to 0.25 μm-1; and
(d) forming a crystal grain array, in which each crystal grain crystallized in a longer shape in a crystal growth direction than in a width direction is aligned adjacently in the width direction, on the non-single crystal semiconductor thin film.
3. The method according to claim 2 , wherein
when the relative light intensity of the maximum value in the light intensity distribution is 1, the relative light intensity of the minimum value is in the range of 0.4 to 0.8.
4. The method according to claim 2 , wherein
the period T of the light intensity distribution is in the range of 4 μm to 80 μm.
5. A method of manufacturing a thin film transistor, comprising:
(a) directly or through a base insulating film forming a non-single crystal semiconductor thin film on a substrate;
(b) forming an insulating film on the non-single crystal semiconductor thin film;
(c) irradiating the substrate with a laser light under such a condition that a light intensity distribution of the laser light has a plurality of inverse peak patterns continuous on an irradiation surface of the insulating film and, when a relative light intensity of the maximum value in the light intensity distribution of the laser light is defined as 1, a light intensity gradient G is selected in the range of 0.02 μm-1 to 0.25 μm-1;
(d) forming a crystal grain array, in which each crystal grain crystallized in a longer shape in a crystal growth direction than in a width direction is aligned adjacently in the width direction, on the non-single crystal semiconductor thin film, and
(e) forming a circuit so that current flows in the crystal growth direction of the crystal grains.