IP Library Granted Patent US 7,566,253
Granted Patent B2
US 7,566,253 · App. 11/268,593 · Granted Jul 28, 2009

Organic light emitting device with anodized anode surface

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,566,253
App. No.
11/268,593
Granted
Jul 28, 2009
Kind
B2
Abstract

There is provided a light emitting device and electric equipment, which are bright and have low consumption power and are low in costs. When an organic EL material is made present in a metal oxide porous body including a heavy atom, phosphorescence light emitting of the organic EL material in which only fluorescence is generally observed can be promoted. Thus, an organic EL element in which phosphorescence light emitting is produced is obtained. With respect to this element, since phosphorescence can be used, light emitting efficiency is high. Also, since a conventional organic EL material can be used, it can be manufactured with a low cost. A light emitting device and electric equipment are manufactured using this organic EL element.

Claims (36)

1. A method for fabricating a light emitting device comprising the steps of:

forming an anode layer;

forming a metal oxide film on said anode layer by anodizing said anode layer, the metal oxide film including a porous body;

forming an organic compound layer on and in contact with said porous body, after anodizing said anode layer; and

forming a cathode layer on said organic compound layer,

wherein said anode layer comprises at least one metal element selected from the group consisting of an element having a metal having an atomic number equal to or larger than rubidium, and groups 4 to 6 elements of a periodic table, and

wherein at least a part of said organic compound layer is present in said porous body.

2. A method of claim 1 , wherein said metal element is one of titanium, tantalum, and tungsten.

3. A method for fabricating a light emitting device comprising the steps of:

forming a cathode layer;

forming a metal oxide film on said anode layer by anodizing said cathode layer, the metal oxide film including a porous body;

forming an organic compound layer on and in contact with, said porous body, after anodizing said cathode layer; and

forming an anode layer on said organic compound layer,

wherein said cathode layer comprises at a metal selected from the group consisting of groups 4 to 6 elements of a periodic table, and

wherein at least a part of said organic compound layer is present in said porous body.

4. A method for fabricating a light emitting device comprising the steps of:

forming an anode layer;

forming a metal oxide film on said anode layer by sol-gel method, the metal oxide film including a porous body;

forming an organic compound layer on said metal oxide film, as said porous body being in contact with said organic compound layer and said anode layer; and

forming a cathode layer on said organic compound layer,

wherein said metal oxide film comprises at least one metal element selected from the group consisting of a metal having an atomic number equal to or larger than rubidium, and groups 4 to 6 elements of a periodic table, and

wherein at least a part of said organic compound layer is present in said porous body.

5. A method of claim 4 , wherein said metal element is one of titanium, tantalum, and tungsten.

6. A method for fabricating a light emitting device comprising the steps of:

forming a cathode layer;

forming a metal oxide film on and in contact with said cathode layer by a surface sol-gel method, the metal oxide film including a porous body;

forming an organic compound layer on said metal oxide film, as said organic compound layer being in contact with said porous body; and

forming an anode layer on said organic compound layer,

wherein said metal oxide film comprises a metal element having an atomic number equal to or larger than rubidium, and

wherein at least a part of said organic compound layer is present in said porous body.

7. A method for fabricating a light emitting device comprising the steps of:

forming a first electrode layer;

forming a metal oxide film having a porous body on and in contact with said first electrode layer by a surface sol-gel method;

forming an organic compound layer on said metal oxide film as said organic compound layer is contact with said porous body; and

forming a second electrode layer on said organic compound layer, wherein said metal oxide film comprises a metal element having an atomic number equal to or larger than rubidium, and

wherein at least a part of said organic compound layer is present in said porous body.

Priority Claims (1)
JP 2000-327699 · Oct 26, 2000 · national
Continuity (2)
Division 0998352100 · Oct 24, 2001
Related Publication 20060063460A1 · Mar 23, 2006