High-bandwidth magnetoresistive random access memory devices and methods of operation thereof

1. A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, the memory cell comprising a plurality of memory units each for storing a bit of datum, the method comprising:

writing the memory cell, comprising

identifying ones of the memory units, each of the ones of the memory units having stored therein a datum different from a datum to be written thereto; and

simultaneously writing all of the ones of the memory units.

2. The method of claim 1 , wherein identifying the ones of the memory units comprises:

reading a datum stored in each of memory units; and

comparing the datum stored in each of the memory units with a datum to be written thereto.

3. The method of claim 2 , wherein the MRAM device is operable by a clock signal, and wherein reading the datum stored in each of the memory units, comparing the datum stored in each of the memory units with a datum to be written thereto, and writing the memory cell are all performed within one cycle of the clock signal.

4. The method of claim 1 , wherein simultaneously writing all of the ones of the memory units comprises:

subjecting the ones of the memory units to a first magnetic field in a first direction between a first time point and a second time point; and

subjecting the ones of the memory units to a second magnetic field in a second direction between a third time point and a fourth time point, the second direction being substantially perpendicular to the first direction.

5. The method of claim 4 , wherein the memory cell corresponds to a write word line and each of the memory units corresponds to one of a plurality of write bit lines, wherein

subjecting the ones of the memory units to the first magnetic field comprises providing a first current through the write word line; and

subjecting the ones of the memory units to the second magnetic field comprises, for each of the ones of the memory units, providing a second current through the corresponding write bit line.

6. The method of claim 4 , wherein the memory cell corresponds to a write word line and each of the memory units corresponds to one of a plurality of write bit lines, wherein

subjecting the ones of the memory units to the first magnetic field comprises, for each of the ones of the memory units, providing a first combination of currents through the write word line and the corresponding write bit line; and

subjecting the ones of the memory units to the second magnetic field comprises, for each of the ones of the memory units, providing a second combination of currents through the write word line and the corresponding write bit line.

7. The method of claim 4 , wherein the third time point precedes the first time point, the first time point precedes the fourth time point, and the fourth time point precedes the second time point.

8. The method of claim 4 , wherein the first time point precedes the third time point, the third time point precedes the second time point, and the second time point precedes the fourth time point.

9. The method of claim 1 , wherein simultaneously writing the ones of the memory units comprises:

subjecting the ones of the memory units to a first magnetic field in a first direction between a first time point and a second time point;

subjecting the ones of the memory units to a second magnetic field in a second direction between the second time point and a third time point, the second direction being substantially opposite to the first direction;

subjecting the ones of the memory units to a third magnetic field in a third direction between a fourth time point and a fifth time point, the third direction being substantially perpendicular to the first direction; and

subjecting the ones of the memory units to a fourth magnetic field in a fourth direction between the fifth time point and a sixth time point, the fourth direction being substantially opposite to the first direction.

10. The method of claim 9 , wherein the memory cell corresponds to a write word line and each of the memory units corresponds to one of a plurality of write bit lines, wherein

subjecting the ones of the memory units to the first magnetic field comprises providing a first current through the write word line;

subjecting the ones of the memory units to the second magnetic field comprises providing a second current through the write word line;

subjecting the ones of the memory units to the third magnetic field comprises, for each of the ones of the memory units, providing a third current through the corresponding write bit line; and

subjecting the ones of the memory units to the fourth magnetic field comprises, for each of the ones of the memory units, providing a fourth current through the corresponding write bit line.

11. The method of claim 9 , wherein the memory cell corresponds to a write word line and each of the memory units corresponds to one of a plurality of write bit lines, wherein

subjecting the ones of the memory units to each of the first magnetic field, the second magnetic field, the third magnetic field, and the fourth magnetic field comprises, for each of the ones of the memory units, providing a respective combination of currents through the write word line and the corresponding write bit line.

12. The method of claim 9 , wherein the first time point precedes the fourth time point, the fourth time point precedes the second time point, the second time point precedes the fifth time point, the fifth time point precedes the third time point, and the third time point precedes the sixth time point.

13. The method of claim 9 , wherein the fourth time point precedes the first time point, the first time point precedes the fifth time point, the fifth time point precedes the second time point, the second time point precedes the sixth time point, and the sixth time point precedes the third time point.

14. The method of claim 9 , the method further comprising subjecting the memory units to a bias magnetic field, wherein

subjecting the ones of the memory units to the first magnetic field comprises subjecting the ones of the memory units to a magnetic field at an angle greater than 90° with a direction of the bias magnetic field, and

subjecting the ones of the memory units to the third magnetic field comprises subjecting the ones of the memory units to a magnetic field at an angle smaller than 90° with a direction of the bias magnetic field.

15. The method of claim 1 , wherein each memory unit comprises a free magnetic region having two easy axes anti-parallel to each other, the method further comprising subjecting the memory units to a bias magnetic field in a direction of one of the two easy axes.

16. The method of claim 15 , wherein the memory cell corresponds to a write word line and each of the memory units corresponds to a write bit line, and wherein the two easy axes are in a direction non-parallel to the write word line or the write bit line of each of the memory units.

17. The method of claim 15 , wherein the memory cell corresponds to a write word line and each of the memory units corresponds to a write bit line, the write bit line corresponding to each of the memory units is substantially perpendicular to the write word line, and wherein the two easy axes are substantially at an angle of 45° with the write word line and the write bit line of each of the memory units.

18. The method of claim 1 , further comprising reading the memory cell, wherein reading the memory cell comprises:

applying a voltage drop across the memory cell;

detecting a current through the memory cell; and

comparing the detected current with a plurality of reference current values to determine the bit of datum stored in each of memory units.