Semiconductor device
A semiconductor device includes an effective wire formed above a substrate in a multilayer interconnection structure and having a first electrode pad in a top layer; a first reinforcing material formed in the multilayer interconnection structure like surrounding the effective wire; a protective film configured to protect a final surface of the multilayer interconnection structure; and a second reinforcing material formed at a position in contact with the protective film and also between an area in which the effective wire is formed and a chip area end, the second reinforcing material being constituted by a film pattern whose Young's modulus is larger than that of a conductor constituting the first electrode pad and that of a conductor constituting the first reinforcing material.
1. A semiconductor device, comprising:
an effective wire formed above a substrate in a multilayer interconnection structure and having a first electrode pad in a top layer;
a first reinforcing material formed in the multilayer interconnection structure like surrounding the effective wire;
a protective film configured to protect a final surface of the multilayer interconnection structure; and
a second reinforcing material formed at a position in contact with the protective film and also between an area in which the effective wire is formed and a chip area end, the second reinforcing material being constituted by a film pattern whose Young's modulus is larger than that of a conductor constituting the first electrode pad and that of a conductor constituting the first reinforcing material.
2. The device according to claim 1 , wherein the second reinforcing material is formed at least near four corners of the chip area end.
3. The device according to claim 1 , wherein the second reinforcing material is formed like continuously surrounding an area in which the effective wire is formed.
4. The device according to claim 1 , wherein the second reinforcing material is formed like discontinuously surrounding an area in which the effective wire is formed.
5. The device according to claim 1 , wherein an opening extending in a lamination direction of the multilayer interconnection structure is formed in a dielectric film between an area in which the second reinforcing material is formed and the chip area end.
6. The device according to claim 1 , wherein the protective film has a laminated structure in which a plurality of layers is laminated and the second reinforcing material is arranged by being sandwiched inside the laminated structure.
7. The device according to claim 1 , wherein the second reinforcing material is formed above the first reinforcing material.
8. The device according to claim 1 , wherein the second reinforcing material is formed between an area in which the first reinforcing material is formed and the chip area end.
9. The device according to claim 1 , wherein the second reinforcing material is formed on the protective film.
10. The device according to claim 1 , wherein the protective film is formed like covering the first electrode pad, and an opening is formed in the protective film and above the first electrode pad.
11. The device according to claim 1 , wherein the first reinforcing material is a laminated via ring.
12. The device according to claim 11 , wherein a plurality of rows of the via ring are arranged.
13. The device according to claim 1 , further comprising:
a second electrode pad arranged between an area in which the effective wire is formed and the chip area end and in a top layer of the multilayer interconnection structure,
wherein the first reinforcing material is laminated up to the second electrode pad from a lower layer side.
14. The device according to claim 13 , wherein the second reinforcing material is formed between an area in which the second electrode pad is formed and the chip area end.
15. The device according to claim 13 , wherein the second reinforcing material is formed on a side of the chip area end from an area in which the first reinforcing material is formed.
16. The device according to claim 1 , further comprising:
a second electrode pad arranged between an area in which the effective wire is formed and the chip area end and in a top layer of the multilayer interconnection structure,
wherein a plurality of rows of via ring are formed toward the chip area end as the first reinforcing material and a part of the plurality of rows of via ring is laminated up to the second electrode pad from a lower layer side.
17. The device according to claim 16 , wherein the second reinforcing material is formed on a side of the chip area end from the plurality of rows of via ring.
18. The device according to claim 1 , wherein a material whose Young's modulus is 150 GPa or more is used for the second reinforcing material.
19. The device according to claim 1 , wherein the second reinforcing material contains one of chrome (Cr), cobalt (Co), nickel (Ni), niobium (Nb), molybdenum (Mo), tantalum (Ta), titanium (Ti), and tungsten (W).
20. The device according to claim 1 , wherein the multilayer interconnection structure contains a wiring layer using a dielectric film whose relative dielectric constant is 3.4 or less as an inter-level dielectric film.