Methods for growing low-resistivity tungsten film
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
1. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) exposing the substrate to a non-boron-containing reducing agent;
(c) exposing the substrate to a tungsten-containing precursor to form a portion of a tungsten nucleation layer;
(d) exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate;
(e) contacting the boron-containing layer with a tungsten-containing precursor to form a portion of the tungsten nucleation layer; and
(f) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film;
wherein the substrate temperature is maintained at about 450° C. or less during steps (b)-(e).
2. The method of claim 1 further comprising repeating steps (b)-(e) at least one time to form the tungsten nucleation layer.
3. The method of claim 2 wherein steps (b)-(e) are repeated from 2-20 times.
4. The method of claim 2 wherein steps (b)-(e) are repeated from 2-5 times.
5. The method of claim 1 wherein the substrate temperature is maintained at about 350° C. or less during steps (b)-(e).
6. The method of claim 1 wherein the non-boron-containing reducing agent is a silane.
7. The method of claim 1 further comprising a purge step between each reactive gas introduction.
8. The method of claim 1 further comprising exposing the substrate to a first dose of a tungsten-containing precursor prior to step (b).
9. The method of claim 8 further comprising exposing the substrate to a boron-containing species prior to the exposing the substrate to the first dose of a tungsten-containing precursor.
10. The method of claim 1 further comprising repeating steps (b) and (c) from 1-10 times prior to performing step (d).
11. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) exposing the substrate to a flow comprising a non-boron-containing reducing agent and a boron-containing species to form a boron-containing layer on the substrate;
(c) contacting the boron-containing layer with a tungsten-containing precursor to form a portion of a tungsten nucleation layer;
(d) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film; and
further comprising exposing the substrate to a first dose of a tungsten-containing precursor prior to step (b).
12. The method of claim 11 further comprising exposing the substrate to a boron-containing species prior to the exposing the substrate to the first dose of a tungsten-containing precursor.
13. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) performing multiple pulse nucleation layer cycles at a temperature at or below about 350° C. to form a portion of a tungsten nucleation layer;
(c) after step (b), performing a pulse nucleation layer cycle at a temperature at or greater than about 350° C. to form a portion of the tungsten nucleation layer; and
(d) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film,
wherein step (b) comprises performing the following steps from 3-6 times:
(e) exposing the substrate to a silane; and
(f) contacting the substrate with a tungsten-containing precursor and wherein step (b) further comprises, prior to step (e), performing the steps of:
(g) exposing the substrate to a boron-containing species to form a boron-containing layer; and
(h) contacting the boron-containing layer with a tungsten-containing precursor.
14. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate;
(c) contacting the boron-containing layer with a tungsten-containing precursor to form a portion of a tungsten nucleation layer;
(d) exposing the substrate to a non-boron-containing reducing agent;
(e) exposing substrate to a tungsten-containing precursor to form a portion of the tungsten nucleation layer;
(f) repeating steps (d) and (e) at least one time to form a portion of the tungsten nucleation layer;
(g) after step (f), exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate layer;
(h) contacting the boron-containing layer with a tungsten-containing precursor to form the tungsten nucleation layer; and
(i) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film.
15. The method of claim 14 wherein the substrate temperature ranges from about 275-350° C. during steps (b)-(e).
16. The method of claim 14 wherein the substrate temperature ranges from about 375-415° C. during steps (g) and (h).
17. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) exposing the substrate to a non-boron-containing reducing agent;
(c) exposing substrate to a tungsten-containing precursor to form a portion of the tungsten nucleation layer;
(d) after step (c), exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate layer;
(e) contacting the boron-containing layer with a tungsten-containing precursor to form a portion of the tungsten nucleation layer;
(f) repeating steps (b)-(e) at least one time to form a portion of the tungsten nucleation layer;
(g) after step (f), exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate layer;
(h) contacting the boron-containing layer with a tungsten-containing precusor to form the tungsten nucleation layer; and
(i) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film.
18. The method of claim 14 further comprising:
(j) prior to step (g), exposing the substrate to a non-boron-containing reducing agent;
(k) exposing substrate to a tungsten-containing precursor to form a portion of the tungsten nucleation layer; and
(l) after step (h), repeating steps (j), (k), (g) and (h) at least one time.
19. The method of claim 14 further comprising repeating steps (b)-(i) at least one time to form a tungsten layer having reduced roughness and low resistivity.
20. The method of claim 2 wherein the portion of the film deposited in (i) is about 500 angstroms.
21. The method of claim 17 , wherein forming the tungsten nucleation layer comprises performing multiple pulse nucleation layer cycles at a temperature at or below about 350° C. to form at least a portion of the tungsten nucleation layer.