Group III nitride semiconductor devices and methods of making
A device having an electrode-insulator layer-group III nitride layer structure, wherein an interface between the insulator layer and the group III nitride semiconductor layer lies along a non-polar plane of the group III nitride semiconductor layer is provided.
1. A semiconductor device comprising:
an electrode-insulator layer-group III nitride semiconductor layer structure, wherein an interface between the insulator layer and the group III nitride semiconductor layer lies along a non-polar plane of the group III nitride semiconductor layer.
2. The semiconductor device of claim 1 , wherein the non-polar plane is an A-plane.
3. The semiconductor device of claim 1 , wherein the non-polar plane is an M-plane.
4. The semiconductor device of claim 1 , wherein the group III nitride comprises a material comprising GaN, AIN, InN or combinations thereof.
5. The semiconductor device of claim 1 , wherein the device is a MOS capacitor.
6. The semiconductor device of claim 1 , wherein the device is a MOSFET, wherein the group III nitride semiconductor layer is a base layer, and wherein the insulator layer is a gate dielectric layer.
7. The semiconductor device of claim 6 , wherein a conduction plane of a MOS channel of the MOSFET during operation comprises the non-polar plane of the group III nitride semiconductor layer.
8. A group III nitride MOSFET comprising:
a source region;
a drain region;
a gate electrode;
a gate dielectric layer; and
a group III nitride semiconductor base layer, wherein the base layer is disposed to have an interface with the gate dielectric layer along a non-polar plane of the base layer, and wherein the MOSFET is configured to form a MOS channel along the interface and in the non-polar plane during operation.
9. The group III nitride MOSFET of claim 8 , wherein the base layer is a non-polar plane group III nitride semiconductor layer.
10. The group III nitride MOSFET of claim 9 , wherein the non-polar plane is an A-plane.
11. The group III nitride MOSFET of claim 8 , wherein the MOSFET is a lateral MOSFET.
12. The group III nitride MOSFET of claim 11 , wherein the MOSFET further comprises a non-polar plane substrate.
13. The group III nitride MOSFET of claim 12 , wherein the substrate comprise a non-polar plane group III nitride crystal.
14. The group III nitride MOSFET device of claim 8 , further comprising a RESURF region.
15. The group III Nitride MOSFET device of claim 8 , wherein a gate leakage current density is less than 1×10 −8 A/cm −2 at 6 MV/cm electric field at room temperature.
16. The group III nitride MOSFET of claim 8 , wherein the MOSFET is a vertical-MOSFET.
17. The group III nitride MOSFET of claim 16 , further comprising a drift layer, wherein the base layer is disposed over the drift layer.
18. The group III nitride MOSFET of claim 17 , wherein the drift layer comprises a C-plane layer.
19. The group III nitride MOSFET of claim 17 , further comprising a C-plane substrate, wherein the drift layer is disposed over the substrate.
20. The group III nitride MOSFET of claim 8 , wherein the group III nitride comprises a material comprising GaN, AIN, InN, or combinations thereof.
21. The group III nitride MOSFET of claim 8 , wherein the group III nitride comprises GaN.
22. The group III nitride MOSFET of claim 8 , wherein the group III nitride comprises AIN.