Oxynitride phosphor and a light emitting device
View Patent ↗One preferred embodiment according to the present invention, there is provided an oxynitride phosphor and a light emitting device using the same that is able to reduce production costs and chromaticity shifts. The phosphor is represented by a general formula of (Ca 1-z Y z ) x (Si, Al) 12 (O, N) 16 :Eu 2+ y , and has a main phase of substantially an alpha SiAlON crystal structure, wherein the value z is larger than 0 and smaller than 0.15.
1. An oxynitride phosphor represented by a general formula of (Ca 1-z Y z ) x (Si, Al) 12 (O, N) 16 :Eu 2+ y ,
wherein a main phase thereof has substantially an alpha SiAlON crystal structure; the value z is larger than 0 and smaller than 0.15;
the value x is from 0.75 to 1.00; and
the value y is from 0.03 to 0.08.
2. A light emitting device comprising:
a phosphor as recited in claim 1 , and
a semiconductor blue light emitting diode chip.
3. A light emitting device as recited in claim 2 , wherein a center emission wavelength of the semiconductor blue light emitting diode chip is from 430 nm to 463 nm.
4. A light emitting device as recited in claim 3 , wherein a center emission wavelength of the semiconductor blue light emitting diode chip is from 440 nm to 456 nm.
5. An oxynitride phosphor represented by a general formula of (Ca 1-z Y z ) x (Si, Al) 12 (O, N) 16 :Eu 2+ y ,
wherein a main phase thereof has substantially an alpha SiAlON crystal structure,
the value z is from 0.15 to 0.35;
the value x is from 0.75 to 1.00; and
the value y is from 0.03 to 0.08.
6. A light emitting device comprising:
a phosphor as recited in claim 5 , and
a semiconductor blue light emitting diode chip.
7. A light emitting device as recited in claim 6 , wherein a center emission wavelength of the semiconductor blue light emitting diode chip is from 434 nm to 464 nm.
8. A light emitting device as recited in claim 7 , wherein a center emission wavelength of the semiconductor blue light emitting diode chip is from 440 nm to 458 nm.
9. An oxynitride phosphor represented by a general formula of (Ca 1-z Y z ) x (Si, Al) 12 (O, N) 16 :Eu 2+ y ,
wherein a main phase thereof has substantially an alpha-SiAlON crystal structure;
the value x is from 0.75 to 1.00;
the value y is from 0.03 to 0.08;
the value z is from 0 to 1.00;
the oxynitride phosphor is sintered at a sintering temperature of from 1650 degrees Celsius to 1750 degrees Celsius under a pressurized nitrogen atmosphere; and
a dominant emission wavelength is from 580 nm to 585 nm.
10. An oxynitride phosphor represented by a general formula of (Ca 1-z Y z ) x (Si, Al) 12 (O, N) 16 :Eu 2+ y ,
wherein a main phase thereof has substantially an alpha-SiAlON crystal structure;
the value x is from 0.75 to 1.00;
the value y is from 0.03 to 0.08;
the value z is from 0 to 1.00;
the oxynitride phosphor is sintered at a sintering temperature of from 1750 degrees Celsius to 1850 degrees Celsius under a pressurized nitrogen atmosphere; and
a dominant emission wavelength is from 583 nm to 588 nm.
11. An oxynitride phosphor represented by a general formula of (Ca 1-z Y z ) x (Si, Al) 12 (O, N) 16 :Eu 2+ y ,
wherein a main phase thereof has substantially an alpha-SiAlON crystal structure;
the value x is from 0.75 to 1.00;
the value y is from 0.03 to 0.08;
the value z is from 0 to 1.00;
the oxynitride phosphor is sintered at a sintering temperature of from 1850 degrees Celsius to 1950 degrees Celsius under a pressurized nitrogen atmosphere; and
a dominant emission wavelength is from 585 nm to 590 nm.
12. A light emitting device comprising:
a phosphor as recited in claim 9 , and
a semiconductor blue light emitting diode chip.
13. A light emitting device comprising:
a phosphor as recited in claim 10 , and
a semiconductor blue light emitting diode chip.
14. A light emitting device comprising:
a phosphor as recited in claim 11 , and
a semiconductor blue light emitting diode chip.