Power amplifier
A power amplifier according to the present invention is operated by switching a main power amplifier and a subsidiary power amplifier. The idle current of the subsidiary power amplifier is smaller than the idle current of the main power amplifier. Each of the main power amplifier and the subsidiary power amplifier has a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification elements, and a latter bias circuit for driving the latter amplification elements, respectively. The interval between the latter amplification element of the main power amplifier and the latter amplification element of the subsidiary power amplifier is not more than 100 μm. The interval between the latter amplification element of the main power amplifier and the latter bias circuit of the subsidiary power amplifier is not less than 200 μm.
1. A power amplifier comprising a main power amplifier and a subsidiary power amplifier having an idle current smaller than idle current of the main power amplifier, and operated by switching the main power amplifier and the subsidiary power amplifier, wherein:
each of the main power amplifier and the subsidiary power amplifier comprises a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification element, and a latter bias circuit for driving the latter amplification element;
spacing between the latter amplification element of the main power amplifier and the latter amplification element of the subsidiary power amplifier is not more than 100 μm; and
spacing between the latter amplification element of the main power amplifier and the latter bias circuit of the subsidiary power amplifier is not less than 200 μm.
2. A power amplifier comprising a main power amplifier and a subsidiary power amplifier having an idle current smaller than idle current of the main power amplifier, and operated by switching the main power amplifier and the subsidiary power amplifier, wherein:
each of the main power amplifier and the subsidiary power amplifier comprises a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification element, and a latter bias circuit for driving the latter amplification element;
spacing between the former amplification element of the main power amplifier and the former amplification element of the subsidiary power amplifier is not more than 50 μm; and
spacing between the former amplification element of the main power amplifier and the former bias circuit of the subsidiary power amplifier is not less than 100 μm.
3. The power amplifier according to claim 1 , wherein:
spacing between the former amplification element of the main power amplifier and the former amplification element of the subsidiary power amplifier is not more than 50 μm; and
spacing between the former amplification element of the main power amplifier and the former bias circuit of the subsidiary power amplifier is not less than 100 μm.
4. The power amplifier according to claim 3 , wherein:
spacing between the latter amplification element of the main power amplifier and the former bias circuit of the main power amplifier is not more than 100 μm.
5. A power amplifier comprising a main power amplifier and a subsidiary power amplifier having an idle current smaller than idle current of the main power amplifier, and operated by switching the main power amplifier and the subsidiary amplifier, wherein:
each of the main power amplifier and the subsidiary power amplifier comprises a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification element, and a latter bias circuit for driving the latter amplification element;
the latter amplification element of the main power amplifier comprises a first latter amplification element and a second latter amplification element;
spacing between each of the first and second latter amplification element and the latter amplification elements of the subsidiary power amplifier is not more than 100 μm; and
spacing between each of the first and second latter amplification elements and the latter bias circuit of the subsidiary power amplifier is not less than 200 μm.
6. The power amplifier according to claim 1 , wherein the former bias circuit or the latter bias circuit comprises a resistor that receives a current corresponding to a control voltage applied to an input terminal of a corresponding amplification element.
7. The power amplifier according to claim 6 , wherein the former bias circuit or the latter bias circuit further comprises an emitter follower circuit connected in parallel with the resistor, and receiving a voltage corresponding to the control voltage applied to the input terminal of a corresponding amplification element.
8. The power amplifier according to claim 7 , wherein the former bias circuit or the latter bias circuit further comprises a linearizer for reducing distortion of signals input to the input terminal of a corresponding amplification element.