Integrated inductor

1. An inductor formed in an integrated circuit, the inductor comprising:

a metal layer pattern;

a redistribution layer pattern formed above the metal layer pattern; the redistribution layer pattern residing in a redistribution layer comprising a part of at least a bond pad structure; and

a via layer pattern formed between the metal layer pattern and the redistribution layer pattern, the via layer pattern electrically conductively contacting the metal layer pattern and the redistribution layer pattern;

wherein the metal layer pattern, the via layer pattern and the redistribution layer pattern substantially overlap at different layers in a coil pattern.

2. The inductor of claim 1 , wherein the metal layer pattern is a top metal layer.

3. The inductor of claim 1 , wherein the metal layer pattern is a coil pattern, and the redistribution layer pattern is a coil pattern, the metal layer pattern substantially overlapping the redistribution layer pattern.

4. The inductor of claim 3 , wherein the via layer pattern is a set of plural metal islands scattered between the metal layer pattern and the redistribution layer.

5. The inductor of claim 1 , wherein the metal layer pattern comprises copper.

6. The inductor of claim 5 , wherein the redistribution layer pattern and the via layer pattern comprise aluminum.

7. The inductor of claim 1 , wherein the metal layer pattern, the redistribution layer pattern, and the via layer pattern provide a substantial inductance.

8. The inductor of claim 1 , wherein the inductor is fabricated with a 0.13 μm process or a more advanced process.

9. The inductor of claim 8 , wherein the metal layer has a thickness of approximately 10 k Å or less, the redistribution layer has a thickness of approximately 13 k Å or less, and the via layer has a thickness of approximately 12 k Å or less.

10. An inductor formed in an integrated circuit, the inductor comprising:

a substrate;

a first metal pattern formed above the substrate; and

a second metal pattern formed above the first metal pattern and electrically conductively contacting the first metal pattern, wherein second metal pattern includes a via layer pattern and a redistribution layer pattern, the redistribution layer pattern residing in a redistribution layer comprising a part of at least a bond pad structure;

wherein the inductor provides a substantial inductance, and the first metal pattern and the second metal pattern are made of different metal materials.

11. The inductor of claim 10 , wherein the first metal pattern comprises copper.

12. The inductor of claim 11 , wherein the second metal pattern comprises aluminum.

13. The inductor of claim 10 , wherein the first metal pattern is a coil pattern, and the second metal pattern is a coil pattern, the first metal pattern substantially overlapping the second metal pattern.

14. The inductor of claim 10 , wherein the inductor is fabricated with a CMOS standard process.

15. The inductor of claim 14 , wherein the first metal pattern includes a top metal layer formed by a CMOS standard process.

16. The inductor of claim 15 , wherein the CMOS standard process is a 0.13 μm process or a more advanced process.

17. The inductor of claim 10 , wherein the first metal pattern has a thickness of approximately 10 k Å or less, the redistribution layer has a thickness of approximately 13 k Å or less, and the via layer has a thickness of approximately 12 k Å or less.

18. A semiconductor element formed in an integrated circuit comprising a metal layer and at least one bond pad, the semiconductor element comprising:

a metal layer pattern formed in the metal layer;

a redistribution layer pattern formed above the metal layer pattern, the redistribution layer pattern residing in a redistribution layer comprising at least one part of the at least a bond pad; and

an interconnect layer pattern formed between the metal layer and the redistribution layer, the interconnect layer electrically conductively contacting the metal layer pattern and the redistribution layer pattern.

19. The semiconductor element of claim 18 comprising an inductor.

20. The semiconductor element of claim 18 , wherein the metal layer pattern and the redistribution layer pattern substantially overlap at different layers.

21. The semiconductor element of claim 18 , wherein the metal layer is a top metal layer.

22. The semiconductor element of claim 18 , wherein the metal layer pattern, the redistribution layer pattern, and the interconnect layer pattern provide a substantial inductance.

23. The semiconductor element of claim 18 , wherein the redistribution layer pattern is a coil pattern.

24. The semiconductor element of claim 18 , wherein the redistribution layer pattern comprises copper.

25. The semiconductor element of claim 18 , wherein the redistribution layer pattern comprises aluminum.

26. The semiconductor element of claim 18 , wherein the metal layer formed by a CMOS standard process.

27. The semiconductor element of claim 18 , wherein the semiconductor element is fabricated with a 0.13 μm process or a more advanced process.

28. The semiconductor element of claim 18 , wherein the interconnect layer pattern comprises a via layer pattern.

29. A semiconductor element formed in an integrated circuit comprising a metal layer and at least one bond pad, the semiconductor element comprising:

a first metal pattern formed in the metal layer; and

a second metal pattern formed above the metal layer and electrically conductively contacting the first metal pattern, wherein the second metal pattern includes an interconnect pattern residing in an interconnect layer comprising a first part of the at least one bond pad.

30. The semiconductor element of claim 29 , wherein the second metal pattern includes a redistribution pattern residing in a redistribution layer comprising a second part of the at least one bond pad.

31. The semiconductor element of claim 29 , wherein the redistribution layer pattern comprises copper.

32. The semiconductor element of claim 29 , wherein the redistribution layer pattern comprises aluminum.

33. The semiconductor element of claim 29 , wherein the first metal pattern substantially overlapping the second metal pattern.

34. The semiconductor element of claim 29 , wherein the semiconductor element is fabricated with a CMOS standard process.

35. The semiconductor element of claim 29 , wherein the metal layer comprises a top metal layer.

36. The semiconductor element of claim 29 , wherein the CMOS standard process is a 0.13 μm process or a more advanced process.

37. The semiconductor element of claim 29 comprising an inductor.