Semiconductor laser diode array

1. A semiconductor laser diode array comprising:

a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region having a first surface disposed on the lower substrate, and a second laser generating region having a first surface disposed on the lower substrate, the second laser generating region being entirely separated from the first laser generating region, and the first and second laser generating regions each having a respective second surface opposed to the first surface thereof, respectively;

an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region having a first surface disposed on the upper substrate, and a fourth laser generating region having a first surface disposed on the upper substrate, the fourth laser generating region being entirely separated from the third laser generating region, and the third and fourth laser generating regions each having a respective second surface opposed to the first surface thereof, respectively; and

an electrode unit electrically connecting the first through fourth laser generating regions to the outside,

wherein the second surfaces of the first and second laser generating regions are vertically bonded to the second surfaces of the third and fourth laser generating regions, respectively, so that first through fourth light-emitting points respectively provided in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion,

wherein the electrode unit comprises:

a first electrode of a first conductivity type formed on a stepped portion of the first laser generating region proximate to the first surface of the first laser generating region;

a second electrode of the first conductivity type formed on a stepped portion of the second laser generating region proximate to the first surface of the second laser generating region;

a third electrode of a second conductivity type formed on the respective second surfaces of the first and third laser generating regions, the second conductivity type being opposite to the first conductivity type;

a fourth electrode of the second conductivity type formed on the respective second surfaces of the second and fourth laser generating regions; and

a fifth electrode of the first conductivity type formed on a first surface of the upper substrate opposite to a second surface of the upper substrate on which the respective first surfaces of the third and fourth laser generating regions are disposed,

wherein the first through fifth electrodes are configured to be independently addressable so as to independently drive the first through fourth laser generating regions, and

wherein the first laser generating region includes a first n-contact layer, a first n-clad layer, a first active layer, a first p-clad layer, a first p-metal layer and a first bonding metal layer sequentially formed on the lower substrate;

the second laser generating region includes a second n-contact layer, a second n-clad layer, a second active layer, a second p-clad layer, a second p-metal layer and a second bonding metal layer sequentially formed on the lower substrate;

the third laser generating region includes a third n-clad layer, a third active layer, a third p-clad layer, a third p-metal layer and a third bonding metal layer sequentially formed on the second surface of the upper substrate;

the fourth laser generating region includes a fourth n-clad layer, a fourth active layer, a fourth p-clad layer, a fourth p-metal layer and a fourth bonding metal layer sequentially formed on the second surface of the upper substrate,

the first bonding metal layer in the first laser generating region is attached to the third bonding metal layer in the third laser generating region; and

the second bonding metal layer in the second laser generating region is attached to the fourth bonding metal layer in the fourth laser generating region.

2. The array of claim 1 , wherein a distance between centers of each of the light-emitting points is less than approximately 50 μm.

3. The array of claim 2 , wherein the first through fourth light-emitting points are arranged in a staggered fashion when viewed in a horizontal direction.

4. The array of claim 3 , wherein the first through fourth light-emitting points are arranged at uniform horizontal spacings.

5. The array of claim 3 , wherein the horizontal spacings are less than approximately 30 μm.

6. The array of claim 2 , wherein the first and second light-emitting points are aligned vertically with third and fourth light-emitting points, respectively.

7. The array of claim 1 , wherein:

the first electrode is formed on a stepped portion of a first n-contact layer in the first laser generating region;

the second electrode is formed on a stepped portion of a second n-contact layer in the second laser generating region;

the third electrode is formed on an exposed part outside a region of the first bonding metal layer that is bonded to the third bonding metal layer;

the fourth electrode is formed on an exposed part outside a region of the second bonding metal layer that is bonded to the fourth bonding metal layer.

8. The array of claim 7 , wherein the areas of the third and fourth bonding metal layers are less than the areas of the first and second bonding metal layers, respectively, so as to expose portions of the first and second bonding metal layers.

9. The array of claim 1 , wherein the upper substrate is formed of a conductive material.

10. The array of claim 9 , wherein the upper substrate is formed of one of GaN or SiC.

11. The array of claim 1 , wherein the lower substrate is formed of a non-conductive material.

12. The array of claim 11 , wherein the lower substrate is a sapphire substrate.

13. The array of claim 1 , wherein the lower substrate is conductive.

14. The array of claim 13 , further comprising first and second current limiting layers interposed between the lower substrate and the first laser generating region and between the lower substrate and the second laser generating region, respectively, so as to electrically insulate the first laser generating region from the second laser generating region.

15. The array of claim 13 , wherein the lower substrate is formed of one of GaN or SiC.

16. The array of claim 1 , wherein the first through fourth laser generating regions include an n-clad layer, an active layer and a p-clad layer, and the p-clad layer has a ridge structure.

17. The array of claim 1 , wherein each of the first through fourth laser generating regions includes an n-clad layer, an active layer and a p-clad layer that are formed of a compound selected among nitride semiconductor compounds represented by the general formula AlxlnyGa1-(x+y)N (0≦x≦1, 0≦y≦1, and 0≦x+y≦1) as a main element.

18. The array of claim 1 , wherein the first and second light emitting points of the first and second laser generating regions emit laser light of the same wavelength band.

19. The array of claim 1 , wherein the first through fourth light emitting points of the first through fourth laser generating regions emit laser light of the same wavelength band.

20. The array of claim 1 , wherein the first and second light emitting points of the first and second laser generating regions each emit laser light of a different wavelength band than laser light emitted from the third and fourth light emitting points of the third and fourth generating regions.

21. The array of claim 6 , wherein the first through fourth light emitting points constitute apexes of a rectangle formed along sides of the first through fourth laser generating regions at which the first through fourth light emitting points are arranged.