Saw filter device
A SAW filter device includes a SAW filter chip in which one-port surface acoustic wave resonators each including an IDT made of Al or an Al alloy, are provided on a θ-rotated Y-cut X-propagation LiNbO 3 substrate. The cutting angle θ of the θ-rotated Y-cut X-propagation LiNbO 3 substrate is in the range between about 50° and about 55°. The normalized film thickness of the IDT 100h/λ (%) (h denotes the thickness of the IDT and λ denotes the wavelength of a surface acoustic wave) is in the range between about 2% and about 4%. The duty ratio of the IDT is equal to or less than about 0.4.
1. A SAW filter device having a trap band and a pass band lower than the trap band, comprising:
a filter chip including a θ-rotated Y-cut X-propagation LiNbO 3 substrate and a plurality of one-port SAW resonators provided on the θ-rotated Y-cut X-propagation LiNbO 3 substrate, the plurality of one-port SAW resonators each including an IDT made of one of Al and an Al alloy; wherein
a cutting angle θ of the θ-rotated Y-cut X-propagation LiNbO 3 is in a range between about 50° and about 55°, a normalized film thickness of the IDT 100h/λ, expressed in %, wherein h denotes a thickness of the IDT and λ denotes a wavelength of a surface acoustic wave, is in a range between about 2% and about 4%, and a duty ratio of the IDT is less than 0.4.
2. The SAW filter device according to claim 1 , further comprising:
a plurality of first inductors provided in a series arm connecting an input terminal and an output terminal; wherein
one of the plurality of one-port SAW resonators is connected between the input terminal and a ground potential, another one of the plurality of one-port SAW resonators is connected between the output terminal and the ground potential, and the others of the plurality of one-port SAW resonators are each connected between the ground potential and a node between two of the plurality of first inductors.
3. The SAW filter device according to claim 2 , further comprising:
a mount substrate on which the filter chip is provided; wherein
the mount substrate includes a single ground terminal, and all portions to be connected to the ground potential which are included in the filter chip are electrically connected to the ground terminal; and
the one of the plurality of one-port SAW resonators connected between either the input terminal or the output terminal and the ground potential defines a capacitive element in the trap band and the pass band, and has a resonant frequency higher than an antiresonant frequency of the others of the plurality of one-port SAW resonators.
4. The SAW filter device according to claim 3 , further comprising:
a circuit substrate underlying the mount substrate on which the filter chip including the LiNbO 3 substrate is provided; wherein
the plurality of first inductors are embedded in the mount substrate.
5. The SAW filter device according to claim 3 , further comprising:
a circuit substrate underlying the mount substrate on which the filter chip including the LiNbO 3 substrate is provided; wherein
the plurality of first inductors are embedded in the circuit substrate.
6. The SAW filter device according to claim 2 , wherein the plurality of first inductors are chip inductance components.
7. The SAW filter device according to claim 1 , further comprising:
a trap circuit portion including a first inductor provided in a series arm connecting an input terminal and an output terminal, and two first resonators, one of which is connected between one end of the first inductor and a ground potential and the other one of which is connected between the other end of the first inductor and the ground potential; and
a filter circuit portion provided between the trap circuit portion and at least one of the input terminal and the output terminal; wherein
the filter circuit portion includes a second resonator connected between the trap circuit portion and either the input terminal or the output terminal included in the series arm, and a second inductor connected between one end of the second resonator and the ground potential;
a resonant frequency of the second resonator is substantially the same as a high frequency end of the pass band; and
the first resonators and the second resonator are included in the plurality of one-port SAW resonators.
8. The SAW filter device according to claim 1 , further comprising:
a filter circuit portion including a third inductor provided in a series arm connecting an input terminal and an output terminal and a first resonator connected in series to the third inductor; and
a trap circuit portion including at least one first inductor provided in the series arm, a second resonator connected between one end of the first inductor and a ground potential, and a third resonator connected between the other end of the first inductor and the ground potential; wherein
the filter circuit portion and the trap circuit portion are connected in series in the series arm;
the pass band has a first center frequency, and a second center frequency is higher than the first center frequency, the second center frequency being included in a filter frequency characteristic defined by capacitance components of the first, second, and third resonators and inductance components of the first and third inductors; and
the first, second, and third resonators are included in the plurality of one-port SAW resonators.