Semiconductor device

1. A method of forming a semiconductor device, comprising:

providing a drain electrode;

providing a source electrode;

depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a single-phase crystalline state of Zn x In 2y O x+3y , wherein x and y are each independently in the range of about 1 to about 15;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

2. The method of claim 1 , wherein depositing a channel includes:

vaporizing a precursor composition; and

depositing the vaporized precursor composition using a physical vapor deposition technique.

3. The method of claim 2 , wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.

4. The method of claim 1 , wherein depositing the channel includes depositing a precursor composition on the surface with an ink-jet deposition technique.

5. The method of claim 1 , wherein depositing a channel includes:

providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds and;

depositing the channel from the precursor composition.

6. The method of claim 1 , including providing a substrate or substrate assembly; and

forming the semiconductor device on the substrate or substrate assembly.

7. A method of forming a semiconductor device, comprising:

providing a drain electrode;

providing a source electrode;

depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a mixed-phase crystalline state formed from compounds selected from the group consisting of ZnO, Zn x In 2y O x+3 y , In 2 O 3 , and mixtures thereof;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

8. A method of forming a semiconductor device, comprising:

providing a drain electrode;

providing a source electrode;

depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having an amorphous form from compounds selected from the group consisting of ZnO, Zn x In 2y O x+3 y , In 2 O 3 , and mixtures thereof;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

9. A method of manufacturing a semiconductor device, comprising:

providing a drain electrode;

providing a source electrode;

providing a precursor composition wherein the precursor composition comprises zinc and indium;

depositing a channel including zinc-indium oxide from the precursor composition contacting the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel,

wherein depositing a channel comprises:

vaporizing the precursor composition to form a vaporized precursor composition; and

depositing the vaporized precursor composition using a physical vapor deposition technique,

in which the channel including zinc-indium oxide includes an amorphous form, a single-phase crystalline state, or a mixed-phase crystalline state of zinc-indium oxide.

10. The method of claim 9 , wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.

11. The method of claim 9 , wherein the step for depositing the channel includes step for depositing the precursor composition with an ink-jet deposition technique.

12. The method of claim 9 , wherein the precursor composition comprises:

a first precursor compound comprising zinc; and

a second precursor compound comprising indium.

13. A method of forming a channel, comprising:

providing a precursor composition wherein the precursor composition has a stoichiometry of (ZnO) 2 (In 2 O 3 ) 1 ; and

depositing the channel including zinc-indium oxide from the precursor composition to electrically couple a drain electrode and a source electrode,

wherein depositing the channel includes

vaporizing the precursor composition to form vaporized precursor composition; and

depositing the vaporized precursor composition between the drain electrode and the source electrode using a physical vapor deposition technique,

in which the channel including zinc-indium oxide includes a single-phase crystalline state of zinc-indium oxide.

14. The method of claim 13 , wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.

15. A semiconductor device formed by steps, comprising:

providing a drain electrode;

providing a source electrode;

providing a first precursor composition including one or more zinc precursor compounds;

providing a second precursor composition including a combination of one or more zinc precursor compounds and one or more indium precursor compounds;

depositing a first portion of a channel including zinc from the first precursor composition to contact the drain electrode and the source electrode;

depositing a second portion of the channel including zinc-indium oxide from the second precursor composition to contact the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel,

in which the channel including zinc-indium oxide includes a single-phase crystalline state or a mixed-phase crystalline state of zinc-indium oxide.

16. The semiconductor device of claim 15 , wherein depositing the channel includes:

vaporizing the precursor composition to form vaporized precursor composition; and

depositing the vaporized precursor composition using a physical vapor deposition technique.

17. The semiconductor device of claim 16 , wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.

18. A method for operating a semiconductor device, comprising:

providing a semiconductor device that includes a drain electrode, a source electrode, a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide formed from the precursor compound comprising Zn 2 In 2 O 5 , a gate electrode, and a gate dielectric positioned between the gate electrode and the channel; and

applying a voltage to the gate electrode to effect a flow of electrons through zinc-indium oxide of the channel.

19. The method of claim 18 , wherein applying a voltage includes using the semiconductor device as a switch in a display device.

20. The method of claim 18 , wherein applying a voltage includes conducting electrons through a channel of zinc-indium oxide in a linear region of operation.