High-performance field effect transistors with self-assembled nanodielectrics
Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.
1. A field effect transistor device comprising a source, a drain, a gate positioned between said source and drain, a Group III-V semiconductor and a gate dielectric coupled thereto, said gate dielectric comprising an organic dielectric component comprising a condensation product of at least two of a siloxane moiety, a bis(silyl)alkyl compound and a π-polarizable moiety.
2. The device of claim 1 wherein said dielectric component comprises a condensation product of one of said π-polarizable moiety and bis(silyl)alkyl compound with a siloxane moiety.
3. The device of claim 2 wherein said π-polarizable moiety comprises a non-linear optical chromophore.
4. The device of claim 2 wherein said chromophore comprises a stilbazolium ion.
5. The device of claim 2 wherein said dielectric component is selected from the condensation product of a C 4 - about C 10 bis(silyl)alkyl compound and a siloxane compound, the condensation product of a π-polarizable compound and a siloxane compound, and combinations of said condensation products.
6. The device of claim 5 wherein said dielectric component is selected from a condensation product of a C 4 - about C 10 bis(silyl)alkyl compound and a trisiloxane compound, and a condensation product of a C 4 - about C 10 bis(silylated) fluorosubstituted alkyl compound and a trisiloxane compound.
7. The device of claim 5 wherein said dielectric component comprises the condensation product of a silane-substituted stilbazolium compound and a trisiloxane compound.
8. The device of claim 5 wherein said dielectric component comprises the sequential condensation products of bis-trichlorosilyloctane, octachlorotrisiloxane, 4-[[(4-(N,N,-bis((hydroxy)ethyl)amino]-phenyl]-1-(4-trichlorosilyl)benzyl-pyridinium iodide and octachlorotrisiloxane.
9. The device of claim 5 wherein said dielectric component comprises iterations of at least one of said condensation products.
10. The device of claim 1 wherein said semiconductor is selected from GaAs, InP, InAs, InSb and GaP compounds, doped GaAs, InP, InAs, InSb and GaP compounds and combinations thereof.
11. The device of claim 1 wherein said semiconductor is selected from GaAs, a doped GaAs compound and combinations thereof.
12. The device of claim 11 comprising a doped-GaAs channel component.
13. The device of claim 1 wherein said gate dielectric further comprises an inorganic dielectric component.
14. The device of claim 13 wherein said inorganic dielectric component is selected from SiO 2 , Si 3 N 4 , HfO 2 , Al 2 O 3 , Ga 2 O 3 , Gd 2 O 3 , ZrO 2 and Ta 2 O 5 and combinations thereof.
15. The device of claim 1 wherein said device is a MISFET.
16. A metal-insulator-semiconductor field effect transistor device comprising a source, a drain, a gate positioned between said source and drain, a GaAs semiconductor and a gate dielectric comprising an organic dielectric component comprising a condensation product of at least two of a siloxane moiety, a bis(silyl)alkyl compound and a π-polarizable moiety.
17. The device of claim 16 wherein said dielectric component comprises a bis(silyl)alkyl compound coupled with silicon-oxygen bonds to a-π-polarizable moiety.
18. The device of claim 16 wherein said component comprises a siloxane moiety coupled to said π-polarizable moiety with silicon-oxygen bonds.
19. The device of claim 18 wherein each said silicon-oxygen bond is the condensation product of a hydrolyzable silicon moiety and a hydroxy functionality.
20. The device of claim 16 wherein said π-polarizable moiety comprises a non-linear optical chromophore.
21. The device of claim 20 wherein said chromophore comprises a stilbazolium ion.
22. The device of claim 16 wherein said gate dielectric further comprises an inorganic dielectric component.
23. The device of claim 22 wherein said inorganic dielectric component is selected from SiO 2 , Si 3 N 4 , HfO 2 , Al 2 O 3 , Ga 2 O 3 , Gd 2 O 3 , ZrO 2 and Ta 2 O 5 and combinations thereof.
24. The device of claim 16 comprising at least one of an n-channel semiconductor and a p-channel semiconductor.
25. The device of claim 16 wherein said gate dielectric material has a thickness dimension between about 2 nm and about 20 nm.