Method of smoothening dielectric layer
View Patent ↗A method of smoothening a dielectric layer. First, a substrate is provided. Next, a dielectric layer is formed on the semiconductor substrate. Finally, the dielectric layer is smoothened by a plasma treatment employing a silane based gas and a nitrogen based gas.
1. A method of forming a dielectric layer, comprising:
providing a substrate in a chamber;
introducing a silane gas and a nitrogen gas in the chamber, thereby allowing the silane gas and the nitrogen gas to react to form a dielectric layer on the substrate with a bulge thereon, wherein the bulge is formed by a chemical reaction of an agglomerate of the silane gas and the nitrogen gas during forming the dielectric layer; and
removing the bulge by providing a plasma treatment employing the silane based gas and the nitrogen based gas again with a first volume ratio to bombard a surface of the dielectric layer.
2. The method as claimed in claim 1 , wherein the dielectric layer is formed by chemical vapor deposition (CVD).
3. The method as claimed in claim 1 , wherein the silane based gas comprises silicane (SiH 4 ), and the nitrogen based gas comprises ammonia (NH 3 ), and wherein the dielectric layer comprises a nitride.
4. The method as claimed in claim 3 , wherein the first volume ratio is smaller than 2.3.
5. The method as claimed in claim 1 , wherein the silane based gas comprises silicane (SiH 4 ), and the nitrogen based gas comprises nitrous oxide (N 2 O), and wherein the dielectric layer comprises an oxide.
6. The method as claimed in claim 5 , wherein the volume ratio of silicane (SiH 4 ) and nitrous oxide (N 2 O) is about 2.5˜3.5.
7. The method as claimed in claim 1 , wherein the treatment is performed for about 0.5˜10 seconds at a bias power of 100˜300 W.
8. A method of smoothening a dielectric layer, comprising:
providing a substrate in a chamber;
introducing an introducing gas in the chamber, thereby allowing the introducing gas to react to form a dielectric layer on the substrate with a bulge thereon, wherein the bulge is formed by a chemical reaction of an agglomerate of the introducing gas during forming the dielectric layer; and
removing the bulge on the dielectric layer by a plasma treatment, wherein the introducing gas is employed again with a first volume ratio to bombard a surface of the dielectric layer during the plasma treatment.
9. The method as claimed in claim 8 , wherein the dielectric layer is formed by chemical vapor deposition (CVD).
10. The method as claimed in claim 8 , wherein the dielectric layer comprises oxide, nitride, updoped silicate glass (USG), fluorinated silicon glass (FSG), or a combination thereof.
11. The method as claimed in claim 8 , wherein the introducing gas comprises a nitrogen-containing gas.
12. The method as claimed in claim 11 , wherein the nitrogen-containing gas comprises N 2 , NH 3 , N 2 O, or a combination thereof.
13. The method as claimed in claim 8 , wherein the introducing gas comprises a silane-containing gas.
14. The method as claimed in claim 8 , wherein the plasma treatment is performed for about 0.5˜10 seconds at a bias power of 100˜500 W.
15. A method of smoothening a dielectric layer, comprising:
providing a substrate in a chamber;
introducing precursors into the chamber at the first time, thereby allowing the precursors to react to deposit a dielectric layer on the substrate with a bulge thereon, wherein the bulge is formed by a chemical reaction of an agglomerate of the precursors during forming the dielectric layer; and
removing the bulge on the dielectric layer by introducing the precursors into the chamber at the second time with a first volume ratio to bombard a surface of the dielectric layer.
16. The method as claimed in claim 15 , wherein the dielectric layer is formed by chemical vapor deposition (CVD).
17. The method as claimed in claim 15 , wherein the precursors comprise a silane based gas including silicane (SiH 4 ), and a nitrogen based gas including ammonia (NH 3 ), and wherein the dielectric layer comprises a nitride.
18. The method as claimed in claim 17 , wherein the first volume ratio is smaller than 2.3.
19. The method as claimed in claim 15 , wherein the precursors comprise silicane (SiH 4 ), and nitrous oxide (N 2 O), and wherein the dielectric layer comprises an oxide.
20. The method as claimed in claim 19 , wherein the volume ratio of silicane (SiH 4 ) and nitrous oxide (N 2 O) is about 0.02˜0.067.