IP Library › Granted Patent US 7,642,502
Granted Patent B2
US 7,642,502 · App. 12/331,003 · Granted Jan 5, 2010

Photo relay having an insulated gate field effect transistor with variable impedance

Assignee: Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 7,642,502
App. No.
12/331,003
Granted
Jan 5, 2010
Kind
B2
Abstract

A LED is provided to emit a light signal corresponding to an input signal. A PD receives the light signal, and generates a photovoltaic output. A MOSFET receives the photovoltaic output. A FET is provided. A first electrode of the FET is connected to the gate of the MOSFET. A second electrode of the FET is connected to a cathode of the PD through a resistor. A control electrode of the FET is connected to the cathode of the PD. A transistor is provided. A first electrode of the transistor is connected to the gate of the MOSFET. A second electrode of the transistor is connected to the source of the MOSFET. A control electrode of the transistor is connected to the second electrode of the FET. A diode is connected between the second electrode of the FET and the second electrode of the transistor.

Claims (24)

1. A photo relay, comprising:

a light emitting diode to emit a light signal corresponding to an input signal;

a photovoltaic diode to receive the light signal from the light emitting diode, so as to generate a photovoltaic output;

an output circuit having an insulated gate field effect transistor to receive the photovoltaic output, an impedance between a drain and a source of the insulated gate field effect transistor varying by changing a capacitance between a gate and the source of the insulated gate field effect transistor by the photovoltaic output;

a field effect transistor having a first electrode, a second electrode, and a control electrode, the first electrode of the field effect transistor being connected to the gate of the insulated gate field effect transistor, the second electrode of the field effect transistor being connected to a cathode of the photovoltaic diode through a resistor, and the control electrode of the field effect transistor being connected to the cathode of the photovoltaic diode;

a transistor having a first electrode, a second electrode, and a control electrode, the first electrode of the transistor being connected to the gate of the insulated gate field effect transistor, the second electrode of the transistor being connected to the source of the insulated gate field effect transistor, and the control electrode of the transistor being connected to the second electrode of the field effect transistor; and

a diode being connected between the second electrode of the field effect transistor and the second electrode of the transistor.

2. A photo relay according to claim 1 , further comprising;

a diode being connected in parallel to the resistor.

3. A photo relay according to claim 1 , wherein the field effect transistor is a depletion mode insulated gate field effect transistor.

4. A photo relay according to claim 1 , wherein the field effect transistor is a junction field effect transistor.

5. A photo relay according to claim 1 , wherein the transistor is a bipolar transistor.

6. A photo relay according to claim 1 , wherein the transistor is a field effect transistor.

7. A photo relay, comprising:

a light emitting diode to emit a light signal corresponding to an input signal;

a first photovoltaic diode to receive the light signal from the light emitting diode, so as to generate a photovoltaic output;

an output circuit having an insulated gate field effect transistor to receive the photovoltaic output, an impedance between a drain and a source of the insulated gate field effect transistor varying by changing a capacitor between a gate and the source of the insulated gate field effect transistor by the photovoltaic output;

a field effect transistor having a first electrode, a second electrode, and a control electrode, the first electrode of the field effect transistor being connected to the gate of the insulated gate field effect transistor, the second electrode of the field effect transistor being connected to a cathode of the first photovoltaic diode, and the control electrode of the field effect transistor being connected to the cathode of the first photovoltaic diode via a parallel circuit of a second photovoltaic diode and a resistor, the second photovoltaic diode to receive the light signal from the light emitting diode and, so as to generate a photovoltaic output;

a transistor having a first electrode, a second electrode, and a control electrode, the first electrode of the transistor being connected to the gate of the insulated gate field effect transistor, the second electrode of the transistor being connected to the source of the insulated gate field effect transistor, and the control electrode of the transistor being connected to the second electrode of the field effect transistor; and

a diode being connected between the second electrode of the field effect transistor and the second electrode of the transistor.

8. A photo relay according to claim 7 , wherein the field effect transistor is a depletion mode insulated gate field effect transistor.

9. A photo relay according to claim 7 , wherein the field effect transistor is a junction field effect transistor.

10. A photo relay according to claim 7 , wherein the transistor is a bipolar transistor.

11. A photo relay according to claim 7 , wherein the transistor is a field effect transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 2, 2009
From: TAJIRI, NAOYA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 022330/0687 →
Priority Claims (1)
JP 2007-321294 · Dec 12, 2007 · national
Continuity (1)
Related Publication 20090152443A1 · Jun 18, 2009