Semiconductor device
View Patent ↗One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.
1. A semiconductor device, comprising:
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, or cadmium-lead; and
a gate dielectric positioned between a gate electrode and the channel.
2. The semiconductor device of claim 1 , wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.
3. The semiconductor device of claim 1 , wherein the metal oxide includes an atomic composition of metal(A)-to-metal(B) ratio (A:B), wherein A and B are each in a range of about 0.05 to about 0.95.
4. The semiconductor device of claim 1 , wherein the metal oxide includes one or more of zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide.
5. The semiconductor device of claim 4 , wherein the metal oxide includes an atomic composition of metal(A)-to-metal(B) ratio (A:B), wherein A and B are each in a range of about 0.05 to about 0.95.
6. The semiconductor device of claim 1 , wherein the channel includes one or more compounds of the formula A x B x C x O x , wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ge, Sn, Pb, each C is selected from the group of Zn, Cd, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, and C are different.
7. The semiconductor device of claim 6 , wherein the one or more compounds of the formula A x B x C x O x includes an atomic composition of ratio A:B:C, wherein A, B, and C, are each in a range of about 0.025 to about 0.95.
8. The semiconductor device of claim 6 , wherein the one or more compounds of formula A x B x C x O x , includes D x , to form a compound of the formula A x B x C x D x O x , wherein D is selected from the group of Zn, Cd, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.
9. The semiconductor device of claim 8 , wherein the one or more compounds of the formula A x B x C x D x O x includes an atomic composition of ratio A:B:C:D, wherein A, B, C, and D, are each in a range of about 0.017 to about 0.95.
10. The semiconductor device of claim 8 , wherein the one or more compounds of formula A x B x C x D x O x includes E x , to form a compound of the formula A x B x C x D x E x O x , wherein E is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, D, and L are different.
11. The semiconductor device of claim 10 , wherein the one or more compounds of the formula A x B x C x D x E x O x includes an atomic composition of ratio A:B:C:D:E, wherein A, B, C, D, and E, are each in a range of about 0.013 to about 0.95.
12. The semiconductor device of claim 1 , wherein the metal oxide includes one or more of zinc-germanium-tin oxide, zinc-tin-lead oxide, zinc-germanium-lead oxide, zinc-cadmium-germanium oxide, zinc-cadmium-tin oxide, zinc-cadmium-lead oxide, cadmium-germanium-tin oxide, cadmium-tin-lead oxide, cadmium-germanium-lead oxide.
13. The semiconductor device of claim 12 , wherein the metal oxide includes an atomic composition or ratio A:B:C, wherein A, B, and C, wherein A, B, and C, are each in a range of about 0.025 to about 0.95.
14. The semiconductor device of claim 1 , wherein the metal oxide includes one or more of zinc-germanium-tin-lead oxide, zinc-cadmium-germanium-tin oxide, zinc-cadmium-germanium-lead oxide, zinc-cadmium-tin-lead oxide, and cadmium-germanium-tin-lead oxide.
15. The semiconductor device of claim 14 , wherein the metal oxide includes an atomic composition or ratio A:B:C:D, wherein A, B, C, and D, are each in a range of about 0.017 to about 0.95.
16. The semiconductor device of claim 1 , wherein the metal oxide includes one or more of zinc-cadmium-germanium-tin-lead oxide.
17. The semiconductor device of claim 16 , wherein the metal oxide includes an atomic composition or ratio A:B:C:D:E, wherein A, B, C, D, and E, are each in a range of about 0.013 to about 0.95.
18. A semiconductor device, comprising:
a drain electrode;
a source electrode;
means for carrying electron flow to electrically couple the drain electrode and the source electrode, wherein the means for carrying electron flow includes one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, or cadmium-lead; and
a gate electrode separated from the channel by a gate dielectric.
19. The semiconductor device of claim 18 , wherein the means for a channel includes a means for forming one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.
20. The semiconductor device of claim 18 , wherein the source, drain, and gate electrodes include a substantially transparent material.
21. A display device, comprising:
a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including:
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more of a metal oxide including: zinc-germanium oxide, zinc-lead oxide, cadmium-germanium oxide, cadmium-tin oxide, cadmium-lead oxide;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
22. The display of claim 21 , wherein the source, the drain, and the gate electrodes include a substantially transparent material.
23. The display of claim 21 , wherein the metal oxide includes an atomic composition of metal(A)-to-metal(B) ratio (A:B), wherein A and B are each in a range of about 0.05 to about 0.95.
24. The display of claim 21 , wherein the channel includes one or more compounds of the formula A x B x C x O x , wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ge, Sn, Pb, each C is selected from the group of Zn, Cd, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, and C are different.
25. The display of claim 24 , wherein the one or more compounds of the formula A x B x C x O x includes an atomic composition of ratio A:B:C, wherein A, B, and C, are each in a range of about 0.025 to about 0.95.
26. The display of claim 24 , wherein the one or more compounds of formula A x B x C x O x , includes D x , to form a compound of the formula A x B x C x D x O x , wherein D is selected from the group of Zn, Cd, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.
27. The display of claim 26 , wherein the one or more compounds of the formula A x B x C x D x O x includes an atomic composition of ratio A:B:C:D, wherein A, B, C, and D, are each in a range of about 0.017 to about 0.95.
28. The display of claim 26 , wherein the one or more compounds of formula A x B x C x D x O x includes E x , to form a compound of the formula A x B x C x D x E x O x , wherein E is selected from the group of Zn, Cd, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, D, and L are different.
29. The display of claim 28 , wherein the one or more compounds of the formula A x B x C x D x E x O x includes an atomic composition of ratio A:B:C:D:E, wherein A, B, C, D, and E, are each in a range of about 0.013 to about 0.95.
30. The display of claim 29 , wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.