Etch profile control
A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O 2 and a sulfur component gas comprising at least one of H 2 S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
1. A method for etching a dielectric layer, wherein the dielectric layer is a silicon oxide based dielectric layer, over a substrate and disposed below a photoresist mask, comprising:
placing the substrate in a plasma processing chamber;
providing an etchant gas comprising a fluorine component, O 2 , and a sulfur component gas comprising at least one of H 2 S and a compound containing at least one carbon sulfur bond into the plasma chamber, wherein the etchant gas has an etchant gas flow and the sulfur component gas has a sulfur component flow, wherein the sulfur component flow is between 0.1-10% of the etchant gas flow, wherein the fluorine component is at least one of a hydrofluorocarbon and a fluorocarbon;
forming a plasma from the etchant gas; and
etching features with a height to weight aspect ratio of at least 5:1 into the dielectric layer through the photoresist mask with the plasma from the etchant gas,
wherein the etchant gas reduces bowing in the critical dimension of the etched features.
2. The method, as recited in claim 1 , wherein the sulfur component gas comprises at least one of H 2 S, COS, and CS 2 .
3. The method, as recited in claim 1 , wherein the silicon oxide based dielectric layer is organosilicate glass.
4. The method, as recited in claim 1 , wherein the chemistry of components of the etchant gas other than the sulfur component gas is different during times in which the sulfur component gas is being provided than during times when the sulfur component gas is not being provided.
5. A method for etching a silicon oxide based dielectric layer over a substrate and disposed below a photoresist mask, comprising:
placing the substrate in a plasma processing chamber;
providing an etchant gas comprising a fluorine component, O 2 and a sulfur component gas comprising at least one of H 2 S and a compound containing at least one carbon sulfur bond into the plasma chamber, wherein the etchant gas has an etchant gas flow and the sulfur component gas has a sulfur component flow, wherein the sulfur component flow is between 0.1-10% of the etchant gas flow;
forming a plasma from the etchant gas; and
etching features with a height to width aspect ratio of at least 5:1 into the dielectric layer through the photoresist mask with the plasma from the etchant gas,
wherein the etchant gas reduces bowing in the critical dimension of the etched features.
6. The method, as recited in claim 5 , wherein the sulfur component gas comprises at least one of H 2 S, COS, and CS 2 .
7. The method, as recited in claim 6 , wherein the fluorine component is at least one of a hydrofluorocarbon and a fluorocarbon.