IP Library Granted Patent US 7,646,019
Granted Patent B2
US 7,646,019 · App. 11/341,673 · Granted Jan 12, 2010

Display device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,646,019
App. No.
11/341,673
Granted
Jan 12, 2010
Kind
B2
Abstract

In view of the problem that a reduced thickness of an EL film causes a short circuit between an anode and a cathode and malfunction of a transistor, the invention provides a display device that has a light emitting element including an electrode and an electroluminescent layer, a wire electrically connected to the electrode of the light emitting element, a transistor provided with an active layer including a source, a drain and a channel forming region, and a power supply line electrically connected to one of the source and the drain of the transistor, wherein the wire is electrically connected to the other of the source and the drain of the transistor, and the width of a part of the electrode in the vicinity of a portion where the electrode is electrically connected to the wire is smaller than that of the electrode in the other portion.

Claims (20)

1. A light emitting device comprising a plurality of pixels, each of the plurality of pixels comprising:

a pixel electrode;

a wire electrically connected to the pixel electrode;

a transistor including an active layer, the active layer having a source region, a drain region and a channel forming region; and

a power supply line electrically connected to one of the source region and the drain region of the transistor,

wherein the wire is electrically connected to the other of the source region and the drain region of the active layer,

wherein the pixel electrode consists of a single first region, a single second region, and a single third region, the second region being located between the first region and the third region,

wherein a width of the second region is smaller than a width of the first region and a width of the third region, and

wherein the pixel electrode and the wire are in contact with and electrically connected to each other in the third region.

2. The light emitting device according to claim 1 ,

wherein the width of the second region is 3 μm or less.

3. The light emitting device according to claim 1 ,

wherein the active layer of the transistor is an amorphous semiconductor film or a crystalline semiconductor film.

4. The light emitting device according to claim 1 ,

wherein the transistor is a top gate transistor or a bottom gate transistor.

5. The light emitting device according to claim 1 ,

wherein the light emitting device is an electroluminescence display device.

6. An electronic apparatus in which the light emitting device according to claim 1 is incorporated.

7. The electronic apparatus according to claim 6 ,

wherein the electronic apparatus is any one of a television set, a video camera, a digital camera, a navigation system, an audio reproducing device, a computer, a game machine, a portable information terminal, a mobile phone, an electronic book, and an image reproducing device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 30, 2006
From: KIMURA, HAJIME
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 017521/0657 →
Priority Claims (1)
JP 2005-024631 · Jan 31, 2005 · national
Continuity (1)
Related Publication 20070114530A1 · May 24, 2007