Microneedle structure and production method therefor
A method for processing a wafer to form a plurality of hollow microneedles projecting from a substrate includes forming, by use of a dry etching process, a number of groups of recessed features, each including at least one slot deployed to form an open shape having an included area and at least one hole located within the included area. The internal surfaces of the holes and the slots are then coated with a protective layer. An anisotropic wet etching process is then performed in such a manner as to remove material from outside the included areas while leaving a projecting feature within each of the included areas. The protective layer is then removed to reveal the microneedles.
1. A microneedle structure comprising:
(a) a substrate formed from a single crystal; and
(b) a microneedle projecting from the substrate, said microneedle comprising:
(i) one or more contiguous surfaces standing substantially perpendicular to the substrate, and
(ii) an inclined surface inclined so as to intersect with said one or more contiguous surfaces,
such that said one or more contiguous surfaces and said inclined surface enclose a microneedle volume of said single crystal contiguous with said substrate, and wherein said microneedle is asymmetric so that a cross-section taken through said microneedle parallel to, and adjacent to, said substrate has no more than one line of symmetry.
2. The microneedle structure of claim 1 , wherein said microneedle further includes a fluid flow channel extending from said inclined surface through said microneedle volume to an opposing face of the substrate.
3. The microneedle structure of claim 1 , wherein said inclined surface extends to intersect with the substrate.
4. The microneedle structure of claim 1 , wherein said inclined surface corresponds substantially to a <111> crystallographic plane in said single crystal.
5. The microneedle structure of claim 1 , wherein said one or more contiguous surfaces include at least two substantially planar surfaces.
6. The microneedle structure of claim 5 , wherein said two substantially planar surfaces subtend an angle of between about 30° and about 120° therebetween.
7. A microneedle structure comprising:
(a) a substrate; and
(b) a microneedle projecting from the substrate, said microneedle comprising:
(i) one or more contiguous surfaces standing substantially perpendicular to the substrate,
(ii) an inclined surface inclined so as to intersect with said one or more contiguous surfaces such that said one or more contiguous surfaces and said inclined surface enclose a microneedle volume, and
(iii) a fluid flow channel extending from said inclined surface through said microneedle to an opposing face of the substrate,
wherein said microneedle is asymmetric so that a cross-section taken through said microneedle parallel to, and adjacent to, said substrate has no more than one line of symmetry.
8. The microneedle structure of claim 7 , wherein said inclined surface extends to intersect with the upper face of the substrate.
9. The microneedle structure of claim 7 , wherein said fluid flow channel has an asymmetric cross-sectional shape.
10. The microneedle structure of claim 7 , wherein said fluid flow channel has an elongated rounded cross-sectional shape.
11. The microneedle structure of claim 7 , wherein said fluid flow channel has a substantially elliptical cross-sectional shape.
12. The microneedle structure of claim 7 , wherein said fluid flow channel has a substantially triangular cross-sectional shape.
13. The microneedle structure of claim 7 , wherein said one or more contiguous surfaces include at least two substantially planar surfaces.
14. The microneedle structure of claim 13 , wherein said two substantially planar surfaces subtend an angle of between about 30° and about 120° therebetween.
15. The microneedle structure of claim 7 , wherein said microneedle volume and said substrate are formed from a contiguous body of single crystal.
16. The microneedle structure of claim 15 , wherein said inclined surface corresponds substantially to a <111> crystallographic plane in said single crystal.