IP Library › Granted Patent US 7,649,139
Granted Patent B2
US 7,649,139 · App. 10/593,644 · Granted Jan 19, 2010

Thermoelectric conversion element and thermoelectric conversion module

Assignee: National Institute of Advanced Industrial Science and Technology
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Quick Facts
Patent No.
US 7,649,139
App. No.
10/593,644
Granted
Jan 19, 2010
Kind
B2
Abstract

The present invention provides a thermoelectric element in which a thin film of p-type thermoelectric material and a thin film of n-type thermoelectric material, which are formed on an electrically insulating substrate, are electrically connected, in which the p-type thermoelectric material and the n-type thermoelectric material are selected from specific complex oxides with a positive Seebeck coefficient and specific complex oxides with a negative Seebeck coefficient, respectively. The present invention also provides a thermoelectric module using the thermoelectric element(s) and a thermoelectric conversion method. In the thermoelectric element of the present invention, since a p-type thermoelectric material and an n-type thermoelectric material are formed into a thin film on an electrically insulating substrate, the thermoelectric element of the invention can be formed on substrates having various shapes, thereby providing thermoelectric elements having various shapes.

Claims (21)

1. A thermoelectric element comprising:

a thin film of p-type thermoelectric material,

a thin film of n-type thermoelectric material, and

the thin film of p-type thermoelectric material and the thin film of n-type thermoelectric material being formed on the electrically insulating substrate and being electrically connected,

(i) the p-type thermoelectric material comprising at least one complex oxide selected from the group consisting of:

complex oxides represented by Formula Bi f Pb g M h 1 CO i M j 2 O k , wherein M 1 is one or more elements selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Ca, Sr, Ba, Al, Y, and lanthanoids; M 2 is one or more elements selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Ag, Mo, W, Nb, and Ta; 1.8≦f≦2.20≦g≦0.4; 1.8≦h≦2.2; 1.6≦i≦2.2; 0≦j≦0.5;and 8≦k≦10; and

(ii) the n-type thermoelectric material comprising at least one complex oxide selected from the group consisting of:

complex oxides represented by the Formula Ln x R y 5 Ni p R q′ 6 O r′ , wherein Ln is lanthanoid; R 5 is one or more elements selected from the group consisting of Na, K, Sr, Ca, Bi, and Nd; R 6 is one or more elements selected from the group consisting of Ti, V, Cr, and Cu 0.5≦x≦1.2; 0≦y≦0.5; 0.5≦p≦1.2; 0.01≦q′≦0.5; and 2.8≦r′≦3.2 .

2. The thermoelectric element according to claim 1 , wherein

the p-type thermoelectric material comprises at least one complex oxide selected from the group consisting of complex oxides represented by the formula: Bi f Pb g M h 1 CO 2 O k , wherein M 1 is one or more elements selected from the group consisting of Sr, Ca and Ba; 1.8≦f≦2.2; 0≦g≦0.4; 1.8≦h≦2.2; and 8≦k≦10;

the n-type thermoelectric material comprises at least one complex oxide selected from the group consisting of complex oxides represented by the formula: Ln x R y 5 Ni p R q′ 6 O r′ , wherein Ln is lanthanoid; R 5 is one or more elements selected from the group consisting of Na, K, Sr, Ca, Bi, and Nd; and R 6 is one or more elements selected from the group consisting of Ti, V, Cr, and Cu; 0.5≦x≦1.2; 0≦y≦0.5; 0.5≦p≦1.2; 0.01≦q′≦0.5; and 2.8≦r′≦3.2.

3. The thermoelectric element according to claim 1 , wherein the thin film of p-type thermoelectric material and the thin film of n-type thermoelectric material are electrically connected by one of the following methods:

bringing one end portion of the thin film of p-type thermoelectric material into direct contact with one end portion of the thin film of n-type thermoelectric material;

bringing one end portion of the thin film of p-type thermoelectric material into contact with one end portion of the thin film of n-type thermoelectric material via an electrically conductive material;

bringing one end portion of the thin film of p-type thermoelectric material into direct contact with one end portion of the thin film of n-type thermoelectric material and covering the contact portion with an electrically conductive material.

4. The thermoelectric element according to claim 1 , wherein the thin film of p-type thermoelectric material and the thin film of n-type thermoelectric material are formed on the same surface or on different surfaces of the electrically insulating substrate.

5. The thermoelectric element according to claim 1 , wherein the electrically insulating substrate is a substrate comprising a plastic material.

6. The thermoelectric element according to claim 1 , wherein thermoelectromotive force is at least 60 μV/K in a temperature range of 293 K to 1073K.

7. The thermoelectric element according to claim 1 , wherein electrical resistance is 1 KΩ or lower in a temperature range of 293 K to 1073 K.

8. A thermoelectric module comprising a plurality of the thermoelectric elements of claim 1 , wherein the thermoelectric elements are electrically connected in series such that an unconnected end portion of a p-type thermoelectric material of one thermoelectric element is electrically connected to an unconnected end portion of an n-type thermoelectric material of another thermoelectric element.

9. A thermoelectric conversion method comprising positioning one end of the thermoelectric module of claim 8 at a high-temperature portion and positioning the other end of the module at a low-temperature portion.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2006
From: MIHARA, TOSHIYUKI; FUNAHASHI, RYOJI; AKEDO, JUN; BABA, SOU; MIKAMI, MASASHI
To: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Reel/Frame 018355/0450 →
Priority Claims (1)
JP 2004-088290 · Mar 25, 2004 · national
Continuity (1)
Related Publication 20070144573A1 · Jun 28, 2007