Method for manufacturing semiconductor device
View Patent ↗An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.
1. A method for manufacturing a semiconductor device comprising:
forming a gate electrode and a gate insulating film over a substrate;
forming a first semiconductor film over the gate insulating film;
irradiating the first semiconductor film with a laser beam through a photomask including a shield, to form a groove by subliming the semiconductor film irradiated with the laser beam through a portion in which the shield is not formed, wherein the groove separates a region of an island-shaped semiconductor film to serve as an active layer and a region of a semiconductor film which does not function as the active layer;
forming an insulating film over the island-shaped semiconductor film and the region which does not function as the active layer; and
forming a source electrode and a drain electrode over the insulating film, the source electrode and the drain electrode being electrically connected to the island-shaped semiconductor film.
2. A method for manufacturing the semiconductor device according to claim 1 , wherein the gate electrode is formed in such a way that a shield for shielding a laser beam over a light-transmitting substrate is used as a photomask, a second semiconductor film formed as a first layer and a metal film formed as a second layer which are formed over a light-transmitting substrate are used as a source substrate, and the metal film is formed over the substrate as the gate electrode by subliming the second semiconductor film in such a way that the source substrate is irradiated with the laser beam through the photomask.
3. A method for manufacturing the semiconductor device according to claim 1 , wherein the first semiconductor film is any one of a zinc compound semiconductor film and an oxide semiconductor film.
4. A method for manufacturing the semiconductor film according to claim 3 , wherein the zinc compound semiconductor film comprises any one of zinc oxide, a mixed crystal semiconductor containing zinc oxide, and zinc sulfide.
5. A method for manufacturing the semiconductor device according to claim 2 , wherein the second semiconductor film is any one of a zinc compound semiconductor film and an oxide semiconductor film.
6. A method for manufacturing the semiconductor film according to claim 5 , wherein the zinc compound semiconductor film comprises any one of zinc oxide, a mixed crystal semiconductor containing zinc oxide, and zinc sulfide.