Monolithically-pumped erbium-doped waveguide amplifiers and lasers
Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
1. A method of doping an oxide, comprising:
forming an InAlP oxide host on a substrate by controlling a composition of the oxide;
broadening a photoluminescence spectral width value by incorporating Erbium into the InAlP oxide via ion implantation to form an Erbium-doped oxide layer; and
annealing the substrate and the InAlP oxide.
2. A method of doping an oxide as defined in claim 1 , wherein controlling the composition of the oxide further comprises controlling at least one of an In concentration, an Al concentration, or a P concentration of the InAlP oxide.
3. A method of doping an oxide as defined in claim 1 , wherein the annealing is performed between 500 and 800 degrees Celsius.
4. A method of doping an oxide as defined in claim 1 , wherein the Erbium is incorporated at a dosage of at least 1×10 +15 cm −2 .
5. A method of doping an oxide as defined in claim 1 , further comprising placing the Erbium-doped oxide layer between a lower semiconductor layer and an upper semiconductor layer to form an optical waveguide.
6. A method of doping an oxide as defined in claim 1 , wherein the substrate is GaAs.
7. A method of doping an oxide as defined in claim 5 , wherein an interface between the Erbium-doped oxide layer and the lower semiconductor layer, and an interface between the Erbium-doped oxide layer and the upper semiconductor layer comprise a large refractive index sufficient to confine light.
8. A method of doping an oxide as defined in claim 5 , wherein the upper semiconductor layer comprises deposited SiO 2 , the upper semiconductor layer forming a waveguide cladding.
9. A method of doping an oxide as defined in claim 5 , further comprising forming an electrical contacting layer under the lower semiconductor layer and a vertical resonant cavity under the electrical contacting layer to facilitate pump light oscillation inside the vertical resonant cavity.
10. A method of doping an oxide as defined in claim 9 , wherein the vertical resonant cavity comprises a top metal mirror and a bottom distributed Bragg reflector (DBR) mirror, the mirrors surrounding an InGaAs quantum well heterostructure (QWH).
11. A method of doping an oxide as defined in claim 10 , further comprising forming a p-n diode active region around the QWH, the active region generating light for pump excitation of Erbium ions.
12. A method of doping an oxide as defined in claim 11 , further comprising co-doping the InAlP oxide with Ytterbium to facilitate absorption of QWH broadband emission.
13. A method of doping an oxide as defined in claim 12 , wherein the active region operates in an incoherent emission regime below a lasing current threshold.
14. A method of doping an oxide as defined in claim 9 , wherein the optical waveguide functions as at least one of a monolithically pumped amplifier, a broadband amplified spontaneous emission (ASE) light source, or a laser.
15. A method of doping an oxide as defined in claim 14 , wherein the laser operates in at least one of a continuous wave (cw) mode or a pulsed mode.
16. A method of doping an oxide as defined in claim 15 , further comprising at least one of Q-switching or mode-locking to operate in the pulsed mode.
17. A method of doping an oxide as defined in claim 14 , wherein the at least one amplifier or laser comprises a wavelength of approximately 1.53 microns.
18. A method of doping an oxide as defined in claim 14 , wherein the at least one amplifier or ASE light source comprises a full-width-half-maximum optical emission bandwidth between 40 nm and 60 nm.
19. A method of doping an oxide as defined in claim 1 , wherein forming the Erbium-doped oxide layer further comprises broadening an Er emission width value in the InAlP oxide host.
20. A method of doping an oxide as defined in claim 19 , wherein the Er emission width value is at least 61 nanometers.
21. A method of doping an oxide as defined in claim 1 , wherein forming the Erbium-doped oxide layer further comprises increasing an Er luminescence lifetime value in the InAlP oxide host.
22. A method of doping an oxide as defined in claim 21 , wherein the Er luminescence lifetime value is at least 8 milliseconds.
23. An Erbium-doped waveguide device, comprising:
at least one InAlP oxide formed on a substrate, the InAlP oxide doped with Erbium after oxidation to minimize photoluminescence-quenching As complexes; and
a lower semiconductor layer and an upper semiconductor layer, the upper and lower layers surrounding the Erbium-doped InAlP oxide to form an optical waveguide therein.
24. An Erbium-doped waveguide device as defined in claim 23 , wherein the substrate comprises GaAs.
25. An Erbium-doped waveguide device as defined in claim 23 , wherein the device comprises:
an electrical contacting layer under the lower semiconductor layer; and
a vertical cavity under the electrical contacting layer to facilitate an optical pump.
26. An Erbium-doped waveguide device as defined in claim 25 , wherein the waveguide device comprises at least one of a monolithically pumped amplifier, a broadband amplified spontaneous emission (ASE) light source, or a laser.