Electronic parts packaging structure and method of manufacturing the same
In an electronic parts packaging structure of the present invention, an electronic parts is mounted or formed on a silicon circuit substrate having a structure in which wiring layers on both sides thereof are connected to each other through a through electrode, and a protruded bonding portion which is ring-shaped and is made of glass, of a seal cap having a structure in which a cavity is constituted by the protruded bonding portion, is anodically bonded to a bonding portion of the silicon circuit substrate, thus, the electronic parts is hermetically sealed in the cavity of the sealing cap.
1. An electronic parts packaging structure comprising:
a silicon circuit substrate having a structure in which wiring layers on both sides thereof are connected to each other with a through electrode;
an electronic parts mounted or formed on the silicon circuit substrate; and
a sealing cap including a ring-shaped protruded bonding portion, and having a structure in which a cavity is constituted by the protruded bonding portion, wherein the sealing cap is composed of a silicon portion having the cavity provided therein, and at least an inner surface portion of the cavity and a bonding part of the protruded bonding portion are made of glass, and the bonding part made of glass of the sealing cap being bonded to a bonding portion made of a silicon surface of the silicon circuit substrate,
wherein the electronic parts is hermetically sealed in the cavity of the sealing cap.
2. The electronic parts packaging structure according to claim 1 , wherein the electronic parts is any one of a semiconductor device and an imaging device, which is electrically connected to the wiring layer and is mounted thereon.
3. The electronic parts packaging structure according to claim 1 , wherein the electronic parts is a MEMS device built into the silicon circuit substrate.
4. The electronic parts packaging structure according to claim 2 , wherein the electronic parts is the semiconductor device connected to the wiring layer by flip-chip bonding, and a gap between the semiconductor device and the silicon circuit substrate is a hollow without being filled with resin.