Methods of programming one-time programmable devices including chalcogenide material
A method of programming a one-time programmable device is provided. A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to the switching device, thereby cutting the fuse. The fuse includes a first electrode electrically connected to the switching device, a second electrode spaced apart from the first electrode, and a chalcogenide pattern disposed between the first and second electrodes. Related one-time programmable devices, phase change memory devices and electronic systems are also disclosed.
1. A method of programming a one-time programmable device that includes a switching device and a fuse in a substrate that are electrically connected to one another, the programming method comprising:
turning on the switching device to apply sufficient program current to cut the fuse,
wherein the fuse comprises a first electrode connected to the switching device, a second electrode spaced apart from the first electrode, and a chalcogenide pattern electrically connecting the first electrode to the second electrode.
2. The method according to claim 1 , wherein the switching device comprises a metal oxide semiconductor (MOS) transistor, a plurality of MOS transistors connected in parallel with each other, a diode and/or a plurality of diodes connected in parallel with each other.
3. The method according to claim 1 , wherein a contact region between the first electrode and the chalcogenide pattern has a smaller width than the chalcogenide pattern.
4. The method according to claim 1 , wherein a portion of the first electrode is cut by the applied program current.
5. The method according to claim 1 , wherein a contact region between the first electrode and the chalcogenide pattern is cut by the applied program current.
6. The method according to claim 1 , wherein a portion of the chalcogenide pattern is cut by the applied program current.
7. The method according to claim 1 , wherein the first electrode comprises Ti, Zr, Hf, V, Nb, Ta, W, TiN, ZrN, HfN, VN, NbN, TaN, WN, CoSi, TiSi, TaSi, NiSi, TiAlN, TiCN, TaCN, TiSiN, ad/or TaSiN.
8. The method according to claim 1 , wherein the chalcogenide pattern comprises an alloy of Germanium (Ge), Stibium (Sb) and Tellurium (Te).