Semiconductor memory device and method of performing a memory operation
A semiconductor memory device and method directed to performing a memory operation in a semiconductor memory device, which include receiving data and a data masking signal corresponding to a portion of the received data configured to be written into memory in response to a write command and the data masking signal configured to block the at least a portion of the received data from being written into the memory, and further configuring different timing parameters of the received data and the data masking signal for executing the write command without writing the at least a portion of the received data into the memory.
1. A method of performing a memory operation in a semiconductor memory device, comprising:
receiving data and a data masking signal corresponding to at least a portion of the received data, the received data scheduled to be written into memory in response to a write command and the data masking signal configured to block the at least a portion of the received data from being written into the memory; and
configuring each of the received data and the data masking signal with different timing parameters to execute the write command without writing the at least a portion of the received data into the memory.
2. The method of claim 1 , wherein configuring the timing parameters includes:
allocating a first latency corresponding to a first number of clock cycles to the received data; and
allocating a second latency corresponding to a second number of clock cycles to the data masking signal.
3. The method of claim 2 , wherein the second number of clock cycles is less than the first number of clock cycles.
4. The method of claim 2 , wherein the first latency corresponding to the first number of clock cycles is equal to a period from the generation of the write command until the received data is received, and the second latency corresponding to the second number of clock cycles is equal to a period from the generation of the write command until the received data masking signal is received.
5. The method of claim 4 , wherein the second latency is controlled to be less than the first latency by configuring the data masking signal to be input earlier than the at least a portion of the received data.
6. The method of claim 1 , wherein the semiconductor memory device is an Synchronous Dynamic Random Access Memory (SDRAM).
7. The method of claim 1 , wherein configuring the timing parameters includes:
allocating a first phase to a first clock signal corresponding to the received data; and
allocating a second phase to a second clock signal corresponding to the data masking signal.
8. The method of claim 7 , wherein the first and second clock signals are internal to the semiconductor memory device.
9. The method of claim 7 , wherein the received data is controlled by the first clock signal and the data masking signal is controlled by the second clock signal.
10. The method of claim 7 , wherein the first and second clock signal have a same clock cycle length, and a phase of the second clock cycle precedes a phase of the first clock cycle by a given clock phase differential.
11. The method of claim 10 , wherein the given clock phase differential is equal to one of half of one clock cycle or equal to one clock cycle.
12. The method of claim 1 , further comprising:
resetting the differently configured timing parameters to be configured substantially equally after the differently configured timing parameters have provided a masking margin sufficient to reduce an occurrence of the data masking signal not blocking the at least a portion of the received data from being written into the memory during an execution of the write command.
13. A semiconductor memory device, comprising:
a flip flop circuit configuring each of received data and a data masking signal corresponding to at least a portion of the received data with different timing parameters, the received data scheduled to be written into memory in response to a write command and the data masking signal configured to block at least a portion of the received data from being written into the memory, the flip flop circuit initially configuring the different timing parameters to execute the write command without writing the at least a portion of the received data into the memory.
14. The semiconductor memory device of claim 13 , wherein the flip flop circuit resets the differently configured timing parameters to be configured substantially equally after the differently configured timing parameters have provided a masking margin sufficient to reduce an occurrence of the data masking signal not blocking the at least a portion of the received data from being written into the memory during an execution of the write command.
15. The semiconductor memory device of claim 13 , further comprising:
a first inverter circuit for receiving an inputted column selection line enable master signal;
a second inverter circuit for inverting an output signal of the flip-flop circuit; and
a logical operation circuit for receiving output signals of the first and second inverter circuits and a column address signal, performing a logical operation on the received signals, and outputting the logical operation result as a column selection line enable signal.
16. The semiconductor memory device of claim 15 , wherein the logical operation is a NAND operation.
17. The semiconductor memory device of claim 13 , wherein the flip-flop circuit is a D flip-flop.
18. The semiconductor memory device of claim 13 , wherein the timing parameters configured by the flip-flop circuit include one of a phase difference between the data masking signal and the received data and a latency between the data masking signal the received data.