Photoelectric conversion device and solid-state imaging device
A photoelectric conversion device including: a first electrode; a photoelectric conversion layer; and a second electrode, in this order, wherein the photoelectric conversion device further includes: a deterioration factor adsorptive and/or reactive layer which covers the first electrode, the photoelectric conversion layer and the second electrode and which has at least one of adsorptivity of adsorbing a deterioration factor and reactivity of reacting with the deterioration factor; and a passivation layer which covers the deterioration factor adsorptive and/or reactive layer to protect the first electrode, the photoelectric conversion layer and the second electrode.
1. A photoelectric conversion device comprising:
a first electrode;
a photoelectric conversion layer; and
a second electrode, in this order,
wherein the photoelectric conversion device further comprises:
a deterioration factor adsorptive and/or reactive layer which covers the first electrode, the photo-electric conversion layer and the second electrode and which has at least one of adsorptivity of adsorbing a deterioration factor and reactivity of reacting with the deterioration factor; and
a passivation layer which covers the deterioration factor adsorptive and/or reactive layer to protect the first electrode, the photoelectric conversion layer and the second electrode.
2. The photoelectric conversion device according to claim 1 , wherein the first electrode is provided on a flat plane.
3. The photoelectric conversion device according to claim 1 , wherein the deterioration factor adsorptive and/or reactive layer is made from a material capable of keeping a performance of the photoelectric conversion layer even after adsorption of the deterioration factor and reaction with the deterioration factor.
4. The photoelectric conversion device according to claim 1 , wherein the deterioration factor adsorptive and/or reactive layer contains an organic material.
5. The photoelectric conversion device according to claim 4 , wherein the deterioration factor adsorptive and/or reactive layer has the reactivity but does not have the adsorptivity, and the organic material is an organic semiconductor.
6. The photoelectric conversion device according to claim 4 , wherein the passivation layer contains silicon nitride or silicon oxynitride.
7. The photoelectric conversion device according to claim 5 , wherein the passivation layer contains silicon nitride or silicon oxynitride.
8. The photoelectric conversion device according to claim 1 , wherein the deterioration factor adsorptive and/or reactive layer has at least the adsorptivity, and the deterioration factor adsorptive and/or reactive layer contains an inorganic material.
9. The photoelectric conversion device according to claim 8 , wherein the inorganic material is a metal oxide or a metal fluoride.
10. The photoelectric conversion device according to claim 1 , wherein the photoelectric conversion layer contains an organic material.
11. The photoelectric conversion device according to claim 4 , wherein the photoelectric conversion layer contains an organic material.
12. The photoelectric conversion device according to claim 1 , wherein a material for forming the deterioration factor adsorptive and/or reactive layer is a material which is formable by a physical vapor deposition method.
13. A solid-state imaging device comprising:
a semiconductor substrate;
the photoelectric conversion device according to claim 1 ; and
a signal read-out part for reading out a signal corresponding to a signal charge generated in the photoelectric conversion device.
14. The solid-state imaging device according to claim 13 , further comprising a photodiode provided in the semiconductor substrate, for detecting light which has transmitted through the photoelectric conversion device.