IP Library › Granted Patent US 7,670,925
Granted Patent B2
US 7,670,925 · App. 11/957,706 · Granted Mar 2, 2010

Semiconductor device, method of manufacturing same, and apparatus for designing same

Assignee: Fujitsu Limited
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Quick Facts
Patent No.
US 7,670,925
App. No.
11/957,706
Granted
Mar 2, 2010
Kind
B2
Abstract

A semiconductor device is disclosed that includes multiple logic circuit cells having respective logic circuits formed therein; and multiple interconnects connected to the corresponding logic circuit cells. At least one of the interconnects has an opening formed therein so as to have an opening ratio different from one or more of the opening ratios of the remaining interconnects.

Claims (6)

1. A method of manufacturing a semiconductor device, comprising:

forming a groove part, in which an interconnect to be connected to a semiconductor element is to be formed, and an insulating structure standing up from a bottom of the groove part; and

forming the interconnect by filling the groove part with a conductive material so as to surround the insulating structure with the conductive material.

2. The method as claimed in claim 1 , wherein said forming the interconnect includes filling the groove part by plating.

3. The method as claimed in claim 1 , wherein the structure is formed so as to divide a predetermined region of the interconnect into a plurality of portions.

4. The method as claimed in claim 1 , wherein the interconnect is a clock signal distribution line for distributing a clock signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2007
From: KITADA, HIDEKI; KIMURA, TAKAHIRO
To: FUJITSU LIMITED
Reel/Frame 020257/0604 →
Priority Claims (1)
JP 2006-343094 · Dec 20, 2006 · national
Continuity (1)
Related Publication 20080150586A1 · Jun 26, 2008