Semiconductor device, display device, and electronic device

1. A semiconductor device comprising:

a transistor for controlling a current supplied to a pixel electrode;

a storage capacitor for holding a gate-source voltage of the transistor;

a first circuit for controlling an input of signal from a fourth wiring to a gate electrode of the transistor;

a second circuit for controlling an input of a first electrical potential from a second wiring to the gate electrode of the transistor;

a third circuit for controlling an input of a second electrical potential from a third wiring to a source electrode of the transistor,

wherein a drain electrode of the transistor is electrically connected to a first wiring, and the source electrode of the transistor is electrically connected to the pixel electrode.

2. A semiconductor device comprising a transistor, a storage capacitor, a first switch, a second switch, and a third switch,

wherein one of a source electrode and a drain electrode of the transistor is electrically connected to a pixel electrode and a first terminal of the third switch, and a second terminal of the third switch is connected to a third wiring;

wherein the other of the source electrode and the drain electrode of the transistor is electrically connected to a first wiring;

wherein a gate electrode of the transistor is electrically connected to a first terminal of the second switch and a first terminal of the first switch, a second terminal of the second switch is electrically connected to a second wiring, and a second terminal of the first switch is electrically connected to a fourth wiring; and

wherein the one of the source electrode and the drain electrode of the transistor is electrically connected to a first terminal of the storage capacitor, and the gate electrode of the transistor is electrically connected to a second terminal of the storage capacitor.

3. The semiconductor device according to claim 2 , wherein the third wiring is a wiring selected from three wirings which control the first to third switches respectively of a preceding row or a next row.

4. The semiconductor device according to claim 2 , wherein the first switch to the third switch are transistors.

5. A semiconductor device comprising a transistor, a storage capacitor, a first switch, a second switch, a third switch, and a fourth switch,

wherein one of a source electrode and a drain electrode of the transistor is electrically connected to a pixel electrode and a first terminal of the third switch, and a second terminal of the third switch is electrically connected to a third wiring;

wherein the other of the source electrode and the drain electrode of the transistor is electrically connected to a first wiring;

wherein a gate electrode of the transistor is electrically connected to a first terminal of the fourth switch;

wherein a second terminal of the fourth switch is electrically connected to a first terminal of the second switch and a first terminal of the first switch, a second terminal of the second switch is electrically connected to a second wiring, and a second terminal of the first switch is electrically connected to a fourth wiring; and

wherein the one of the source electrode and the drain electrode of the transistor is electrically connected to a first terminal of the storage capacitor, and the second terminal of the fourth switch is electrically connected to a second terminal of the storage capacitor.

6. A semiconductor device comprising a transistor, a storage capacitor, a first switch, a second switch, a third switch, and a fourth switch,

wherein one of a source electrode and a drain electrode of the transistor is electrically connected to a pixel electrode and a first terminal of the third switch, and a second terminal of the third switch is electrically connected to a third wiring;

wherein the other of the source electrode and the drain electrode of the transistor is electrically connected to a first wiring;

wherein a gate electrode of the transistor is electrically connected to a first terminal of the second switch and a first terminal of the fourth switch, and a second terminal of the second switch is electrically connected to a second wiring, a second terminal of the fourth switch is electrically connected to a first terminal of the first switch, and a second terminal of the first switch is electrically connected to a fourth wiring; and

wherein the one of the source electrode and the drain electrode of the transistor is electrically connected to a first terminal of the storage capacitor, and the second terminal of the fourth switch is electrically connected to a second terminal of the storage capacitor.

7. A semiconductor device comprising a transistor, a storage capacitor, a first switch, a second switch, a third switch, and a fourth switch,

wherein one of a source electrode and a drain electrode of the transistor is electrically connected to a pixel electrode and a first terminal of the third switch, and a second terminal of the third switch is electrically connected to a third wiring;

wherein the other of the source electrode and the drain electrode of the transistor is electrically connected to a first terminal of the fourth switch, and a second terminal of the fourth switch is electrically connected to a first wiring;

wherein a gate electrode of the transistor is electrically connected to a first terminal of the second switch and a first terminal of the first switch, a second terminal of the second switch is electrically connected to a second wiring, and a second terminal of the first switch is electrically connected to a fourth wiring; and

wherein the one of the source electrode and the drain electrode of the transistor is electrically connected to a first terminal of the storage capacitor, the gate electrode of the transistor is electrically connected to a second terminal of the storage capacitor.

8. A semiconductor device comprising a transistor, a storage capacitor, a first switch, a second switch, a third switch, and a fourth switch,

wherein one of a source electrode and a drain electrode of the transistor is electrically connected to a first terminal of the fourth switch, a second terminal of the fourth switch is electrically connected to a pixel electrode and a first terminal of the third switch, and a second terminal of the third switch is electrically connected to a third wiring;

wherein the other of the source electrode and the drain electrode of the transistor is electrically connected to a first wiring;

wherein a gate electrode of the transistor is electrically connected to a first terminal of the second switch and a first terminal of the first switch, a second terminal of the second switch is electrically connected to a second wiring, and a second terminal of the first switch is electrically connected to a fourth wiring; and

wherein the second terminal of the fourth switch is electrically connected to a first terminal of the storage capacitor, and the gate electrode of the transistor is electrically connected to a second terminal of the storage capacitor.

9. The semiconductor device according to any one of claims 2 , 5 , 6 , 7 and 8 , wherein the third wiring is the same as a wiring which controls the third switch.

10. The semiconductor device according to any one of claims 5 , 6 , 7 and 8 , wherein the third wiring is a wiring selected from four wirings which control the first to fourth switches respectively of a preceding row or a next row.

11. The semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 , wherein the transistor is a thin film transistor.

12. The semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 , wherein the transistor is an n-channel transistor.

13. The semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 , wherein a semiconductor layer of the transistor is formed of a non-crystalline semiconductor film.

14. The semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 , wherein a semiconductor layer of the transistor is formed of amorphous silicon.

15. The semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 , wherein a semiconductor layer of the transistor is formed of a crystalline semiconductor film.

16. The semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 , wherein a potential supplied to the second wiring is higher than a potential supplied to the third wiring, and a difference between the two potentials is larger than an absolute value of the threshold voltage of the transistor.

17. The semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 , wherein the transistor is a p-channel transistor.

18. The semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 , wherein a potential supplied to the second wiring is lower than a potential supplied to the third wiring, and a difference between the two potentials is larger than an absolute value of the threshold voltage of the transistor.

19. The semiconductor device according to any one of claims 5 , 6 , 7 and 8 , wherein the first switch to the fourth switch are transistors.

20. The semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 , wherein the storage capacitor is a capacitor element.

21. A display device comprising the semiconductor device according to any one of claims 1 , 2 , 5 , 6 , 7 and 8 .

22. An electronic device comprising the display device according to claim 21 as a display portion.

23. A semiconductor device comprising:

a transistor, one of a source electrode and a drain electrode of which is electrically connected to a first wiring, the other of the source electrode and the drain electrode of which is electrically connected to a third wiring, and a gate electrode of which is electrically connected to a second wiring and a fourth wiring;

a storage capacitor which holds a gate-source voltage of the transistor;

means for holding a first voltage in the storage capacitor by applying to the storage capacitor a first potential which is supplied to the second wiring and a second potential which is supplied to the third wiring;

means for discharging a voltage of the storage capacitor down to a second voltage;

means for holding a fifth voltage that is the sum of the second voltage and a fourth voltage in the storage capacitor by applying to the storage capacitor a potential that is the sum of the first potential and a third voltage; and

means for supplying a load with a current which is set for the transistor in accordance with the fifth voltage.

24. A semiconductor device comprising:

a transistor, one of a source electrode and a drain electrode of which is electrically connected to a first wiring, the other of the source electrode and the drain electrode of which is electrically connected to a third wiring, and a gate electrode of which is electrically connected to a second wiring and a fourth wiring;

a storage capacitor which holds a gate-source voltage of the transistor;

means for holding a first voltage in the storage capacitor by applying to the storage capacitor a first potential which is supplied to the second wiring and a second potential which is supplied to the third wiring;

means for discharging a voltage of the storage capacitor down to the threshold voltage of the transistor;

means for holding a fourth voltage that is the sum of the threshold voltage of the transistor and a third voltage in the storage capacitor by applying to the storage capacitor a potential that is the sum of the first potential and a second voltage; and

means for supplying a load with a current which is set for the transistor in accordance with the fourth voltage.

25. The semiconductor device according to claim 23 or 24 , wherein the transistor is a thin film transistor.

26. The semiconductor device according to claim 23 or 24 , wherein the transistor is an n-channel transistor.

27. The semiconductor device according to claim 23 or 24 , wherein a semiconductor layer of the transistor is formed of a non-crystalline semiconductor film.

28. The semiconductor device according to claim 23 or 24 , wherein a semiconductor layer of the transistor is formed of amorphous silicon.

29. The semiconductor device according to claim 23 or 24 , wherein a semiconductor layer of the transistor is formed of a crystalline semiconductor film.

30. The semiconductor device according to claim 23 or 24 , wherein the first potential is higher than the second potential and a difference between the first potential and the second potential is larger than an absolute value of the threshold voltage of the transistor.

31. The semiconductor device according to claim 23 or 24 , wherein the transistor is a p-channel transistor.

32. The semiconductor device according to claim 23 or 24 , wherein the first potential is lower than the second potential and a difference between the first potential and the second potential is larger than an absolute value of the threshold voltage of the transistor.

33. The semiconductor device according to claim 23 or 24 , wherein the load is a light emitting element.

34. The semiconductor device according to claim 23 or 24 , wherein the storage capacitor is a capacitor element.

35. A display device comprising the semiconductor device according to claim 23 or 24 .

36. An electronic device comprising the display device according to claim 35 as a display portion.