FIN field effect transistor
Methods, devices and systems for a FinFET are provided. One method embodiment includes forming a FinFET by forming a relaxed silicon germanium (Si 1-X Ge X ) body region for a fully depleted Fin field effect transistor (FinFET) having a body thickness of at least 10 nanometers (nm) for a process design rule of less than 25 nm. The method also includes forming a source and a drain on opposing ends of the body region, wherein the source and the drain are formed with halo ion implantation and forming a gate opposing the body region and separated therefrom by a gate dielectric.
1. A method for forming a FinFET, comprising:
forming a relaxed silicon germanium (Si 1-X Ge X ) body region for a fully depleted Fin field effect transistor (FinFET) having a body thickness of at least 10 nanometers (nm) for a process design rule of less than 25 nm;
forming a source and a drain on opposing ends of the body region, wherein the source and the drain are formed with halo ion implantation; and
forming a gate opposing the body region and separated therefrom by a gate dielectric,
wherein the method includes epitaxially growing a germanium (Ge) layer on a sidewall on the body region to provide biaxial compressive strain to the body region in forming a PMOS FinFET.
2. The method of claim 1 , wherein the method includes epitaxially growing the Ge layer on the sidewall on the body region to a thickness of approximately 12 nm.
3. The method of claim 1 , wherein the method includes forming a channel between the source and the drain having a width less than 35 nm and a length less than 25 nanometers.
4. The method of claim 1 , wherein forming the source and the drain with halo ion implantation includes:
forming a p-type source and drain having a Boron (B) dopant at a concentration of 2×10 20 atoms/cm 3 ; and
forming a halo ion implant underneath the p-type source drain having a concentration of 2×10 18 atoms/cm 3 .
5. The method of claim 1 , wherein forming the source and the drain with halo ion implantation includes:
forming an n-type source and drain having an Arsenic (As) dopant at a concentration of 2×10 20 atoms/cm 3 ; and
forming a halo ion implant underneath the n-type source and drain having a concentration of 2×10 18 atoms/cm 3 .
6. A method for forming a FinFET, comprising:
forming a relaxed silicon germanium (Si 1-X Ge X ) body region for a fully depleted Fin field effect transistor (FinFET) having a body thickness of at least 10 nanometers (nm) for a process design rule of less than 25 nm;
forming a substitute gate over the body region;
forming a source and a drain on opposing ends of the body region, wherein the source and the drain are formed with halo ion implantation;
annealing the source and the drain before removing the substitute gate; and
forming a gate separated from the body region by a gate dielectric.
7. The method of claim 6 , wherein the method includes forming a source extension and a drain extension while the substitute gate is present on the device.
8. The method of claim 6 , wherein the method includes epitaxially growing a germanium (Ge) sidewall on the body region to provide biaxial compressive strain on the body region in forming a PMOS FinFET.
9. The method of claim 6 , wherein the method includes epitaxially growing a silicon (Si) sidewall on the body region to provide biaxial tensile strain on the body region in forming an NMOS FinFET.
10. The method of claim 6 , wherein forming the relaxed silicon germanium (Si 1-X Ge X ) body region includes forming a forming a relaxed silicon germanium (Si 1-X Ge X ) where X is in a range of 0.5 to 0.6.
11. The method of claim 6 , wherein annealing the source and the drain before removing the substitute gate includes annealing at a temperature in a range of 850 degrees Celsius to 1050 degrees Celsius for a period of at least 5 seconds to activate the source and the drain.
12. The method of claim 11 , wherein forming the gate includes forming a metal gate separated from the body region by a dielectric material having a dielectric constant (K) greater than 12.