IP Library Granted Patent US 7,675,158
Granted Patent B2
US 7,675,158 · App. 11/447,943 · Granted Mar 9, 2010

Semiconductor integrated circuit including a power supply, and semiconductor system including a semiconductor integrated circuit

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,675,158
App. No.
11/447,943
Granted
Mar 9, 2010
Kind
B2
Abstract

Provided are a semiconductor integrated circuit including a power supply, a semiconductor system including the semiconductor integrated circuit, and a method of forming the semiconductor integrated circuit. The semiconductor integrated circuit includes: a semiconductor substrate on a surface of which a plurality of electrical circuits and a plurality of power pads are mounted; an insulation layer stacked on the semiconductor substrate; a first conductive layer connected to a first power pad by a first via and stacked on the insulation layer; a second conductive layer connected to a second power pad by a second via, stacked on the insulation layer, and separated from the first insulation layer; and a power generation layer stacked on the first conductive layer and the second conductive layer and that generates voltage.

Claims (35)

1. A plurality of semiconductor integrated circuits, each of the plurality of the semiconductor integrated circuits comprising:

a semiconductor substrate;

a plurality of electrical circuits and a plurality of power pads mounted on the semiconductor substrate;

an insulation layer stacked on the semiconductor substrate; and

a voltage provider,

wherein each voltage provider includes,

a first conductive layer connected to a first power pad by a first via and stacked on the insulation layer,

a second conductive layer connected to a second power pad by a second via, stacked on the insulation layer and separated from the first conductive layer, and

a power provider stacked on the first conductive layer and the second conductive layer, and configured to provide power to at least one of the plurality of power pads.

2. The plurality of semiconductor integrated circuits of claim 1 , wherein, in each of the plurality of the semiconductor circuits, the first conductive layer and the first via form a first integrated wiring structure, and the second conductive layer and the second via form a second integrated wiring structure.

3. The plurality of semiconductor integrated circuits of claim 1 , wherein, in each of the plurality of the semiconductor circuits, the power provider is a material that generates voltage.

4. The plurality of semiconductor integrated circuits of claim 1 , wherein, in each of the plurality of the semiconductor circuits, the first power pad is a power supply pad, and the second power pad is connected to a ground.

5. The circuit of claim 1 , wherein the power provider is a battery.

6. The circuit of claim 5 , wherein the battery is a solar cell.

7. A semiconductor system comprising:

a plurality of the semiconductor integrated circuits of claim 1 , wherein the voltage provider of each of the plurality of semiconductor integrated circuit applies an appropriate voltage to a corresponding power pad through a via.

8. The system of claim 7 , wherein the voltage provider is at least one of a battery and a material that generates voltage.

9. The system of claim 8 , wherein the voltage provider of each semiconductor integrated circuit is at least one of a capacitor and a carbon nano-tube which stores electric charge supplied from an external source and applies voltage to the corresponding power pad through the via.

10. The system of claim 9 , further comprising:

an electric charge generator which supplies electric charge to the voltage provider.

11. A semiconductor system comprising:

a plurality of semiconductor integrated circuits,

wherein each of the plurality of the semiconductor integrated circuits includes,

at least one semiconductor substrate,

a plurality of electrical circuits and a plurality of power pads arranged on each of the at least one semiconductor substrate,

an insulation layer arranged on the at least one semiconductor substrate and the plurality of electrical circuits and the plurality of power pads, and

a voltage provider,

wherein each voltage provider includes,

at least one conductive layer arranged on the insulation layer, and

a power provider arranged on the at least one conductive layer and configured to provide power to at least one of the plurality of power pads.

12. The semiconductor system of claim 11 , wherein the power provider is a battery.

13. The semiconductor system of claim 12 , wherein the battery is a solar cell.

14. The semiconductor system of claim 11 , wherein the power provider is a capacitor.

15. The semiconductor system of claim 14 , wherein the capacitor includes the at lest one conductive layer arranged on the insulation layer as a bottom electrode; a dielectric layer arranged on the bottom electrode; and an upper electrode arranged on the dielectric layer.

16. The semiconductor system of claim 14 , wherein the capacitor is configured to store electric charge supplied from an external source and discharge stored electric charge to the at least one of the plurality of power pads.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2006
From: KIM, KYU-HYOUN; KIM, CHANG-HYUN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 017981/0994 →
Priority Claims (1)
KR 10-2005-0052739 · Jun 18, 2005 · national
Continuity (1)
Related Publication 20060284302A1 · Dec 21, 2006