Methods of eliminating pattern collapse on photoresist patterns
A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.
1. A method for developing a photoresist pattern on a semiconductor substrate for preventing collapse of the developed pattern, the method comprising:
providing a photoresist film on a semiconductor substrate;
exposing the photoresist film through a mask to create at least one exposed area of photoresist and at least one unexposed area of photoresist;
removing the at least one exposed area of photoresist; and
applying a stabilizing treatment to the photoresist film, wherein the stabilizing treatment includes a non-volatile component, and wherein the stabilizing treatment provides mechanical support to the photoresist film without changing the physical and chemical properties of the photoresist film.
2. The method of claim 1 , wherein the step of applying a stabilizing treatment to the photoresist film further includes removing a volatile component from the stabilizing treatment to leave the non-volatile component over the substrate and between the unexposed areas of photoresist.
3. The method of claim 2 , wherein the step of removing a volatile component from the stabilizing treatment further comprises subjecting the substrate to a temperature of about 90° C. to about 200° C.
4. The method of claim 2 further comprising supplying a rinse solution to the photoresist pattern.
5. The method of claim 4 further comprising drying the photoresist pattern to form an electronic component structure.
6. The method of claim 1 , wherein the non-volatile component comprises non-volatile particles selected from the group consisting of silica particles, graphite particles, latex spheres and Bucky balls.
7. The method of claim 6 , wherein the non-volatile particles comprise at least one precipitant material.
8. The method of claim 7 , wherein the precipitant material is glucose or starch.
9. The method of claim 1 , wherein the non-volatile component comprises a polymer.
10. The method of claim 1 , wherein the photoresist film is a bilayer photoresist.