IP Library Granted Patent US 7,688,165
Granted Patent B2
US 7,688,165 · App. 12/464,142 · Granted Mar 30, 2010

Galvanic isolation mechanism for a planar circuit

Assignee: Siemens Milltronics Process Instruments, Inc.
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Quick Facts
Patent No.
US 7,688,165
App. No.
12/464,142
Granted
Mar 30, 2010
Kind
B2
Abstract

A mechanism is provided for coupling a coaxial cable to a planar circuit to provide galvanic isolation between the coaxial cable and the planar circuit while providing low transmission loss and reflections between the coaxial cable and the circuit. The mechanism comprises a co-planar waveguide coupled to the coaxial cable, a microstrip line connected to the circuit, a galvanic isolation component and a ground plane. The co-planar waveguide, the microstrip line and the galvanic isolation component are formed on one side of a two-sided substrate. The ground plane is formed on the other side of the substrate and underlies at least a portion of the co-planar waveguide to form a grounded co-planar waveguide. The ground plane includes a notch underlying a portion of the co-planar waveguide to provide a transition region from the co-planar waveguide to the grounded co-planar waveguide.

Claims (16)

1. A galvanic device for a planar circuit, the planar circuit formed on a two-sided substrate, the galvanic isolation mechanism comprising:

a coplanar waveguide formed on a first side of the two-sided substrate and including a center conductor and two side ground planes running parallel and equidistant on each side of the center conductor, the centre conductor ending in a microstrip line;

a first ground plane formed on a second side of the two-sided substrate and underlying the microstrip line and an adjacent portion of the coplanar waveguide, thus transforming the coplanar waveguide into a grounded coplanar waveguide;

a direct current isolation component formed on the first side of the two-sided substrate; and

a coaxial cable connector mounted on the first side of the two-sided substrate and connected to the coplanar wave guide,

wherein a first terminal of the coaxial cable connector is connected to the two side ground planes and a second terminal of the coaxial cable connector is connected to the center conductor of the coplanar wave guide,

wherein the direct current isolation component is arranged between the microstrip line and a further microstrip line formed on the first side of the two-sided substrate, and comprises a strip extending from an end of the microstrip line, with another strip extending from an adjacent end of the further microstrip line, and a gap separating and galvanically isolating said strips from each other, and

wherein the two side ground planes of the coplanar waveguide are galvanically isolated from the first ground plane.

2. The galvanic isolation mechanism as claimed in claim 1 , further comprising:

a second ground plane formed on the second side of the two-sided substrate, the second ground plane separated from the first ground plane by a gap separating and galvanically isolating the first and second ground planes from each other.

3. The galvanic isolation mechanism as claimed in claim 1 , further comprising a dielectric backing layer placed against the second side of the two-sided substrate, between the two-sided substrate and the first ground plate.

4. The galvanic isolation mechanism as claimed in claim 1 , wherein the first ground plane includes a notch underlying a section of the coplanar waveguide and forming a transition zone for the coplanar waveguide to the grounded coplanar waveguide.

5. The galvanic isolation mechanism as claimed in claim 4 , wherein the coplanar waveguide includes a transition section between the grounded coplanar waveguide and the microstrip line, the side ground planes include shaped end sections adjacent the transition section where a width of slots between the center conductor of the grounded coplanar waveguide and the side ground planes increases.

6. The galvanic isolation mechanism as claimed in claim 4 , further comprising:

a second ground plane formed on the second side of the two-sided substrate, the second ground plane separated from the first ground plane by a gap separating and galvanically isolating the first and second ground planes from each other.

7. The galvanic isolation mechanism as claimed in claim 6 , wherein the second ground plane includes a tip, the tip having a configuration substantially matching the configuration of the notch.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2012
From: SIEMENS CANADA LIMITED
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 027557/0304 →
CERTIFICATE AND ARTICLES OF AMALGAMATION Recorded Jan 13, 2012
From: SIEMENS MILLTRONICS PROCESS INSTRUMENTS, INC.
To: SIEMENS CANADA LIMITED
Reel/Frame 027531/0121 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2009
From: SERBAN, GABIREL
To: SIEMENS MILLTRONICS PROCESS INSTRUMENTS, INC.
Reel/Frame 022669/0019 →
Priority Claims (1)
EP 05021186 · Sep 28, 2005 · regional
Continuity (2)
Continuation 1152945800 · Sep 28, 2006
Related Publication 20090224859A1 · Sep 10, 2009