IP Library › Granted Patent US 7,700,381
Granted Patent B2
US 7,700,381 · App. 11/350,027 · Granted Apr 20, 2010

Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them

Assignee: Kabushikia Kaisha Toshiba
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Quick Facts
Patent No.
US 7,700,381
App. No.
11/350,027
Granted
Apr 20, 2010
Kind
B2
Abstract

A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

Claims (6)

1. A method of manufacturing a semiconductor wafer, comprising:

preparing said wafer sliced from a monocrystalline ingot;

removing undulation on a principal plane of said wafer by carrying out an etching process on said wafer, said etching process using an alkali solution and involving different etching speeds depending on crystal orientations;

measuring a crystal orientation of said wafer according to etch pits formed on said principal plane by said etching process, said etch pits being defined by second-orientation crystal faces that are different from first-orientation crystal faces exposed at said principal plane;

forming a reference ID mark on said wafer, to indicate the measured crystal orientation of said wafer; and

removing said etch pits.

Priority Claims (2)
JP P2001-080452 · Mar 21, 2001 · national
JP P2001-345984 · Nov 12, 2001 · national
Continuity (2)
Division 1010133700 · Mar 20, 2002
Related Publication 20060131696A1 · Jun 22, 2006