Electric device with nanowires comprising a phase change material
A method of manufacturing an electric device including providing a body with a resistor of a phase change material being changeable between a first phase and a second phase, the resistor having a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance different from the first electrical resistance when the phase change material is in the second phase. The method further includes connecting the resistor between first and second conductors.
1. A method of manufacturing an electric device comprising the acts of:
providing a body with a resistor comprising a phase change material being changeable between at least a first phase and a second phase, the resistor being a nanowire;
providing the body with a first conductor;
providing a dielectric over the body covering the first conductor;
providing an opening in the dielectric to expose at least a portion of the first conductor;
providing a metal film inside the opening;
heating the metal film to form a metal particle inside the opening;
growing the nanowire using the metal particle as a catalyst to provide the first conductor with the nanowire to electrically connect the nanowire to the first conductor; and
providing the nanowire with a second conductor to electrically connect the nanowire to the second conductor.
2. The method of claim 1 , wherein the act of growing the nanowire is by a vapor-liquid-solid growth method.
3. The method of claim 2 , wherein the metal particle has a diameter between 2 and 100 nm.
4. The method of claim 2 , wherein during the act of growing, a temperature of the growing nanowire is decreased.
5. The method of claim 1 , wherein the opening has a depth of 5-100 nm, in a direction parallel to a main axis of the nanowire.
6. The method of claim 1 , wherein the phase change material comprises (In 1-x Ga x ) with 0≦x≦1 and 0≦y≦1.