Technique for the growth of planar semi-polar gallium nitride
View Patent ↗A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 1 1} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 1 3} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 2 2} gallium nitride (GaN) grown on a {1 1 00} sapphire substrate, and (4) {10 1 3} gallium nitride (GaN) grown on a {1 1 00} sapphire substrate.
1. A method for growing a nitride film, comprising growing a semi-polar nitride film on a substrate.
2. The method of claim 1 , wherein the semi-polar nitride film is grown parallel to the substrate's surface.
3. The method of claim 2 , wherein the substrate is a miscut substrate.
4. A semi-polar nitride film grown on a substrate.
5. The semi-polar nitride film of claim 4 , wherein the semi-polar nitride film is a planar, semi-polar nitride film.
6. The semi-polar nitride film of claim 5 , wherein the planar, semi-polar nitride film is grown parallel to the substrate's surface.
7. The semi-polar nitride film of claim 6 , wherein the substrate is a miscut substrate.
8. The method of claim 1 , wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate.
9. The method of claim 1 , wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate.
10. The method of claim 1 , wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate.
11. The method of claim 1 , wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate.
12. The method of claim 1 , wherein the semi-polar nitride film is a planar semi-polar nitride film.
13. The semi-polar nitride film of claim 4 , wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate.
14. The semi-polar nitride film of claim 4 , wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate.
15. The semi-polar nitride film of claim 4 , wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate.
16. The semi-polar nitride film of claim 4 , wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate.
17. The method of claim 3 , wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film.
18. The method of claim 3 , wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
19. The method of claim 18 , wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
20. The method of claim 3 , wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
21. The method of claim 3 , wherein the substrate is a {100} substrate miscut in specific directions.
22. The method of claim 21 , wherein the specific directions comprise <001>, <010> or <011>.
23. The semi-polar nitride film of claim 4 , wherein the semi-polar nitride film is comprised of a plurality of nitride layers.
24. The semi-polar nitride film of claim 6 , wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film.
25. The semi-polar nitride film of claim 6 , wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
26. The semi-polar nitride film of claim 25 , wherein the planar, semi-polar nitrid film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
27. The semi-polar nitride film of claim 6 , wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
28. The semi-polar nitride film of claim 6 , wherein the substrate is a {100} substrate miscut in specific directions.
29. The semi-polar nitride film of claim 28 , wherein the specific directions comprise <001>, <010> or <011>.
30. The semi-polar nitride film of claim 4 , wherein the semi-polar nitride film is comprised of a plurality of nitride layers.