Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device is provided. In particular, a method for removing unwanted material layers from an edge and lower bevel region of a wafer is provided. The method includes performing a first etch of an edge region of a wafer having material layers formed thereon, coating the wafer with a photoresist layer, and patterning the photoresist layer to expose at least the edge and an upper bevel region of the wafer for etching the material layers remaining after performing the first etch.
1. A method for manufacturing a semiconductor device, the method comprising:
forming material layers on a wafer;
performing a first etch to remove a portion of the material layers formed on the edge region and the lower bevel region of the wafer; and
forming a photoresist layer on the material layers and patterning the photoresist layer to expose at least the edge region and the lower bevel region of the wafer,
wherein the portion of the material layers formed on the edge region and the lower bevel region of the wafer is removed by performing the first etch before forming the photoresist layer,
wherein performing the first etch comprises:
interposing the wafer between a first plate and a second plate, wherein the first plate and the second plate contact the wafer while exposing the edge region and the lower bevel region of the wafer, and
exposing the material layers formed on the edge region and the lower bevel region of the wafer to SF 6 , CF 4 and O 2 gases to remove the portion of the material layers.
2. The method as defined in claim 1 , wherein exposing the material layers formed on the edge region and the lower bevel region of the wafer is performed under conditions of 1 to 2 Torr, 400 to 900 Watt, 50 to 150 SCCM SF 6 , 50 to 200 SCCM CF 4 , and 5 to 30 SCCM O 2 .
3. The method as defined in claim 1 , wherein the portion of the material layers formed on the edge region and the lower bevel region of the wafer comprises an oxide layer.
4. The method as defined in claim 1 , further comprising performing a wet etching process using the patterned photoresist layer as a mask, wherein the wet etching process is performed under conditions of 55° C., HF 49% to 55%, and 500 to 1000 RPM.
5. The method as defined in claim 1 , wherein the material layers formed on the wafer comprise a metallic layer, a nitride layer, and an oxide layer.
6. A method for manufacturing a semiconductor device, the method comprising:
forming material layers on a wafer;
performing a first etch to remove a portion of the material layers formed on the edge region and the lower bevel region of the wafer;
forming a photoresist layer on the material layers and patterning the photoresist layer to expose at least the edge region and the lower bevel region of the wafer; and
performing a wet etching process using the patterned photoresist layer as a mask, wherein the wet etching process is performed under conditions of 55° C., HF 49% to 55%, and 500 to 1000 RPM,
wherein the portion of the material layers formed on the edge region and the lower bevel region of the wafer is removed by performing the first etch before forming the photoresist layer.
7. The method as defined in claim 6 , wherein the portion of the material layers formed on the edge region and the lower bevel region of the wafer comprises an oxide layer.
8. The method as defined in claim 6 , wherein the material layers formed on the wafer comprise a metallic layer, a nitride layer, and an oxide layer.