Method for fabricating semiconductor epitaxial layers using metal islands
Disclosed is a method for fabricating a GaN semiconductor epitaxial layer. The method includes the steps of: (a) providing a substrate within a reaction furnace; (b) setting a temperature range of the substrate to be 200° C.˜1,300° C.; (C) supplying a Ga metallic source on the substrate; (d) changing the supplied Ga metallic source on the substrate, to Ga metal islands; (e) supplying a nitrogenous source to the Ga metal islands after suspending supply of the Ga metallic source; (f) forming GaN islands by reacting the Ga metal islands with the nitrogenous source; and (g) growing a GaN epitaxial layer by basing the GaN islands as a seed.
1. A method for fabricating a GaN semiconductor epitaxial layer, the method comprising the steps of:
(a) providing a substrate within a reaction furnace;
(b) setting a temperature range of the substrate to be 200° C.˜1,300° C.;
(c) supplying a Ga metallic source on the substrate;
(d) changing the supplied Ga metallic source on the substrate, to Ga metal islands;
(e) supplying a nitrogenous source to the Ga metal islands after suspending supply of the Ga metallic source;
(f) forming GaN islands by reacting the Ga metal islands with the nitrogenous source; and
(g) growing a GaN epitaxial layer on the GaN islands by using the GaN islands as a seed.
2. The method of claim 1 , wherein the temperature range in step (b) is set to be 400° C.˜800° C.
3. The method of claim 1 , wherein the nitrogenous source is gas composed at least one of ammonia or hydrazine.
4. The method of claim 1 , wherein the substrate comprises any one of sapphire, SiC or Si.
5. The method of claim 1 , wherein the temperature range in step (f) is maintained to be 200° C.˜1,300° C.
6. The method of claim 1 , wherein the step (d) is performed under an atmosphere of at least one of hydrogen or nitrogen.
7. The method of claim 1 , wherein the GaN epitaxial layer in the step (g) is grown at a temperature of or higher than 900° C.
8. The method of claim 1 , wherein the GaN epitaxial layer grown in the step (g) constitutes any one of LED or LD, which is capable of generating light by means of an electron-hole combination.
9. A method for fabricating a GaN device, the method comprising the steps of:
(a) providing a substrate within a reaction furnace;
(b) setting a temperature range of the substrate to be 200° C.˜1,300° C.;
(c) supplying a Ga metallic source on the substrate;
(d) changing the supplied Ga metallic source on the substrate, to Ga metal islands;
(e) supplying a nitrogenous source to the Ga metal islands after suspending supply of the Ga metallic source;
(f) forming GaN islands by reacting the Ga metal islands with the nitrogenous source;
(g) growing a u-GaN epitaxial layer on the GaN islands by using the GaN islands as a seed; and
(h) growing a GaN device layer including an n-GaN layer, GaN active layer and a p-GaN layer onto the u-GaN layer.