Flash memory device and method of fabricating the same
A semiconductor device includes a semiconductor substrate having a cell region and a peripheral region. A cell array is defined within the cell region, the cell array having first, second, third, and fourth sides. A first decoder is defined within the peripheral region and provided adjacent to the first side of the cell array. A first isolation structure is formed at a first boundary region provided between the first side of the cell array and the peripheral region. A first dummy active region is formed at a second boundary region that is provided between the second side of the cell array and the peripheral region. The first isolation structure has a first portion that has a first depth and a second portion that has a second depth.
1. A semiconductor device, comprising:
a semiconductor substrate having a cell region and a peripheral region;
a first isolation structure formed in the peripheral region;
a second isolation structure formed in the cell region, wherein the second isolation structure is adjacent to the first isolation structure;
an active region formed between the first isolation structure, and the second isolation structure, wherein the active region is formed when gate lines connected to a decoder are not disposed between the first isolation structure and the second isolation structure; and
a field oxide structure formed between the first isolation structure and the second isolation structure, wherein the field oxide structure is formed when the gate lines are disposed between the first isolation structure and the second isolation structure.
2. The semiconductor device of claim 1 ,
wherein the first isolation structure and the second isolation structure have different depths.
3. The semiconductor device of claim 1 , further comprising:
a well pickup region provided at the active region.
4. The semiconductor device of claim 3 , wherein the substrate has a well region formed within the cell region, the well pickup region having a higher dopant concentration than the well region provided in the cell region.
5. The semiconductor device of claim 1 , wherein the device is a non-volatile memory device.
6. The semiconductor device of claim 3 ,
wherein the cell region includes first, second, third, and fourth sides,
wherein the active region is provided adjacent to the first side of the cell region, and
wherein the field oxide structure is provided adjacent to the second, third and fourth sides of the cell region.
7. The semiconductor device of claim 3 ,
wherein the cell region includes first, second, third, and fourth sides,
wherein the active region is provided adjacent to the first and second sides of the cell region, and
wherein the field oxide structure is provided adjacent to the third and fourth sides of the cell region.