Silicon-based RF system and method of manufacturing the same

1. An RF system comprising:

at least one silicon substrate; and

plural RF devices respectively formed on either side of the silicon substrate,

wherein the RF devices comprise one or more flat devices formed on one side of the at least one silicon substrate, and

wherein the at least one silicon substrate is formed with at least one groove and the flat devices are formed in the groove.

2. The RF system as claimed in claim 1 , wherein the at least one silicon substrate comprises one substrate, and the RF devices further comprise

one or more RF MEMS devices formed on the other side of the silicon substrate to be electrically connected with the flat devices.

3. The RF system as claimed in claim 2 , wherein the flat devices include at least one active device and at least one passive device.

4. The RF system as claimed in claim 3 , wherein the active device includes at least one of a PA and a LNA, and the passive device includes at least one of an inductor, a capacitor, a resistor, and an antenna.

5. An RF system comprising:

at least one silicon substrate; and

plural RF devices respectively formed on either side of the silicon substrate,

wherein the at least one silicon substrate comprises one substrate,

wherein the RF devices comprise:

one or more flat devices formed on one side of the silicon substrate; and

one or more RF MEMS devices formed on the other side of the silicon substrate to be electrically connected with the flat devices, and

wherein the silicon substrate is formed with at least one groove for electric isolation of the silicon substrate from the RF MEMS devices.

6. The RF system as claimed in claim 2 , wherein the silicon substrate is formed with one or more via-holes filled with a conductive material for electrically interconnecting the RF MEMS devices and the flat devices.

7. An RF system comprising:

at least one silicon substrate; and

plural RF devices respectively formed on either side of the silicon substrate,

wherein the at least one silicon substrate comprises a first silicon substrate formed with a groove on one side thereof, and a second silicon substrate bonded to the one side of the first silicon substrate, and wherein the RF devices are formed in the groove.

8. The RF system as claimed in claim 7 , wherein the RF devices comprise:

one or more first flat devices formed on the one side of the first silicon substrate; and

one or more RF MEMS devices formed on a surface of the second silicon substrate facing the first silicon substrate.

9. The RF system as claimed in claim 8 , further comprising one or more second flat devices formed on the other side of the first silicon substrate.

10. The RF system as claimed in claim 9 , further comprising a third silicon substrate having one side bonded to the other side of the first silicon substrate in such a way that the one side of the third silicon substrate is electrically connected with the first silicon substrate, wherein the RF devices further comprise one or more third flat devices formed on the other side of the third silicon substrate.

11. The RF system as claimed in claim 10 , wherein the first and third silicon substrates are respectively formed with one or more via-holes filled with conductive material.

12. The RF system as claimed in claim 11 , further comprising an insulation layer interposed between the first and third silicon substrates.

13. The RF system as claimed in claim 12 , wherein the first to third flat devices each comprises at least one of a PA, a LNA, an inductor, a capacitor, a resistor and an antenna.

14. A RF system comprising:

a silicon substrate having a first groove formed on one side thereof, at least one second groove formed on the other side, and one or more via-holes filled with conductive material so that both sides of the silicon substrate are electrically connected with one another;

one or more flat devices formed in the first groove; and

one or more RF MEMS devices formed atop of the at least one second groove so as to be electrically isolated from the silicon substrate.

15. A RF system comprising:

a first silicon substrate having a groove on a first side thereof, within which one or more first flat devices are formed, a second flat device formed on a second side thereof, and at least one first via-hole filled with conductive material so that both sides of the first silicon substrate are electrically connected with one another;

a second silicon substrate bonded to the first side of the first silicon substrate to be electrically connected with the first silicon substrate and formed with at least one RF MEMS device positioned within the groove; and

a third silicon substrate bonded to the second side of the first silicon substrate to be electrically connected with the silicon substrate and formed with at least one second via-hole filled with conductive material so that both sides of the third silicon substrate are electrically connected with one another, the third silicon substrate further comprising at least one third flat device formed on one side thereof.