Semiconductor device, stacked semiconductor device, and manufacturing method for semiconductor device
A semiconductor device includes: a base substrate; a semiconductor chip formed on the base substrate in such a manner that an adhesive layer is interposed between the semiconductor chip and the base substrate; a resin layer covering at least a portion of the semiconductor chip; and an external connection terminal electrically connected to the base substrate via a wiring layer. The external connection terminal is in the same plane as the surface of the resin layer, and is exposed from the resin layer. With this configuration, it is possible to provide a semiconductor device of a lower stage, and a stacked semiconductor device, each of which is high in connection reliability in a case of stacking plural semiconductor devices, no matter if a connection terminal of a semiconductor device stacked on an upper stage is low.
1. A semiconductor device, comprising:
a base substrate;
a semiconductor chip electrically coupled to the base substrate;
a supporting member attached to the semiconductor chip, wherein a wiring layer is formed on a surface of the supporting member opposite the semiconductor chip;
a resin layer covering at least portions of the semiconductor chip and the supporting member; and
a plurality of external connection terminals that are electrically coupled to the wiring layer, wherein surfaces of the external connection terminals are exposed from the resin layer, and wherein the exposed surfaces of the external connection terminals are substantially co-planer with an exterior surface of the resin layer.
2. The semiconductor device as set forth in claim 1 , wherein bonding wires electrically couple the wiring layer to the base substrate.
3. The semiconductor device as set forth in claim 1 , wherein:
a first surface of the resin layer is depressed towards the base substrate so that the first surface is closer to the base substrate than a second surface of the resin layer is to the base substrate,
the first surface being a surface of the resin layer in a region where the external connection terminals are provided, and
the second surface being a surface of the resin layer other than the first surface.
4. The semiconductor device as set forth in claim 1 , wherein said external connection terminals are made of a solder.
5. The semiconductor device as set forth in claim 1 , wherein said external connection terminals are made of copper.
6. The semiconductor device as set forth in claim 2 , wherein the bonding wires are encapsulated in the resin layer.
7. The semiconductor device as set forth in claim 2 , wherein a plurality of solder bumps electrically couple the semiconductor chip to the base substrate.
8. The semiconductor device as set forth in claim 2 , wherein bonding wires also electrically couple the semiconductor chip to the base substrate.
9. The semiconductor device as set forth in claim 4 , wherein said solder has a melting point of 200° C. or higher.
10. The semiconductor device as set forth in claim 8 , further comprising an adhesive layer that couples the supporting member to the semiconductor chip, wherein the bonding wires that electrically couple the semiconductor chip to the base substrate pass through the adhesive layer.
11. The semiconductor device as set forth in claim 8 , further comprising a spacer position between the semiconductor chip and the supporting member, wherein the spacer provides sufficient space between the semiconductor chip and the supporting member to allow the bonding wires to pass, unobstructed, between the semiconductor chip and the base substrate.