Electrolyte transistor
Electrolyte transistor including a gate structure, two sources/drains, an electrolyte layer and a buried conductive layer is provided. The gate structure including a gate dielectric layer and a gate is located above a substrate. The two sources/drains are separated from each other and located above the substrate on each side the gate structure. The electrolyte layer is located between and contacts the two sources/drains, and located between and contacts the gate structure and the substrate. The buried conductive layer is located between the electrolyte layer and the substrate. The electrolyte layer between the two sources/drains includes a channel. The conductivity of the electrolyte layer between the two sources/drains is changed by a redox reaction, so as to turn on or turn off the channel.
1. An electrolyte transistor, comprising:
a gate structure, comprising a gate dielectric layer and a gate, located above a substrate;
two sources/drains, separated from each other and located above the substrate on each side of the gate structure;
an electrolyte layer, located between and contacting the two sources/drains, and located between the gate structure and the substrate; and
a buried conductive layer, located between the electrolyte layer and the substrate,
wherein the electrolyte layer between the two sources/drains comprises a channel, and a conductivity of the electrolyte layer is changed by a redox reaction, so as to turn on or turn off the channel.
2. The electrolyte transistor according to claim 1 , wherein a material of the electrolyte layer comprises solidified electrolyte.
3. The electrolyte transistor according to claim 2 , wherein the solidified electrolyte comprises GeSe, GeS, AgTeSe, AgTeS, or AgSeS doped with silver, copper, chromium, or niobium, or an organic material having the ability of electrochemically altering its electrical conductivity through change of redox state thereof.
4. The electrolyte transistor according to claim 3 , wherein the organic material is a polymer material.
5. The electrolyte transistor according to claim 4 , wherein the polymer material is selected from the group consisting of polythiophenes, polypyrroles, polyanilines, polyisothianaphtalenes, polyphenylene vinylenes and copolymers thereof.
6. The electrolyte transistor according to claim 4 , wherein the polymer material is a polymer or copolymer of a 3,4-dialkoxythiophene, wherein the two alkoxy groups may be the same or different or together represent an optionally substituted oxy-alkylene-oxy bridge.
7. The electrolyte transistor according to claim 6 , wherein the polymer or copolymer of a 3,4-dialkoxythiophene is selected from the group consisting of poly(3,4-methylenedioxythiophene), poly(3,4-ethylenedioxythiophene, poly(3,4-propylenedioxythiophene), and poly(3,4-butylenedioxythiophene).
8. The electrolyte transistor according to claim 4 , wherein the organic material further comprises a polyanion compound.
9. The electrolyte transistor according to claim 8 , wherein the polyanion compound is poly(styrene sulkphonc acid) or a salt thereof.
10. The electrochemical transistor device according to claim 4 , wherein the solidified electrolyte comprises a binder.
11. The electrochemical transistor device according to claim 10 , wherein the binder is a gelling agent selected from the group consisting of gelatine, a gelatine derivative, polyacrylic acid, polymethacrylic acid, poly(vinylpyrrolidone), polysaccharides, polyacrylamides, polyurethanes, polypropylene oxides, polyethylene oxides, poly(styrene sulphonic acid) and poly(vinyl alcohol), and salts and copolymers thereof
12. The electrochemical transistor device according to claim 4 , wherein the solidified electrolyte comprises an ionic salt.
13. The electrolyte transistor according to claim 2 , further comprising a dielectric layer, for isolating the two sources/drains from the substrate.
14. The electrolyte transistor according to claim 1 , further comprising a dielectric layer, for isolating the two sources/drains from the substrate.
15. The electrolyte transistor according to claim 1 , wherein a material of the two sources/drains comprises aluminium, silver, gold, platinum, copper, copper/aluminium alloy, tungsten, nickel, titanium nitride, tantalum nitride, molybdenum nitride, or any combination thereof.
16. The electrolyte transistor according to claim 1 , wherein a material of the gate comprises aluminium, silver, gold, platinum, copper, copper-aluminium alloy, tungsten, nickel, titanium nitride, tantalum nitride, molybdenum nitride, or any combination thereof.
17. The electrolyte transistor according to claim 1 , wherein a material of the buried conductive layer comprises aluminium, silver, gold, platinum, copper, copper-aluminium alloy, tungsten, nickel, titanium nitride, tantalum nitride, molybdenum nitride, or any combination thereof.
18. The electrolyte transistor according to claim 1 , wherein the electrolyte transistor is a depletion mode transistor.
19. The electrochemical transistor device according to claim 4 , wherein the solidified electrolyte comprises an ionic salt.