Image sensor and method for manufacturing the same
An image sensor and a method for manufacturing the same are provided. The image sensor can include transistor circuitry on a substrate, and a photodiode arranged above the transistor circuitry. The photodiode can include carbon nanotubes and a conductive polymer layer on the carbon nanotubes. A transparent conducting electrode can be provided on the carbon nanotubes.
1. An image sensor comprising:
a substrate including transistor circuitry;
a lower interconnection on the substrate connected to the transistor circuitry
a first conductive-type conductive layer on the lower interconnection;
an intrinsic layer on the first conductive-type conductive layer;
carbon nanotubes on the intrinsic layer; and
a conductive polymer layer coated on the carbon nanotubes,
wherein the carbon nanotubes are doped with a second conductive-type material.
2. The image sensor according to claim 1 , wherein the conductive polymer layer comprises a color polymer.
3. The image sensor according to claim 1 , further comprising a transparent conducting electrode on the carbon nanotubes.
4. An image sensor comprising:
a substrate including transistor circuitry;
a lower interconnection on the substrate connected to the transistor circuitry;
carbon nanotubes on the lower interconnection;
an intrinsic layer on the carbon nanotubes;
a second conductive-type conductive layer on the intrinsic layer; and
a conductive polymer layer on the second conductive-type conductive layer,
wherein the carbon nanotubes are doped with a first conductive-type material.
5. The image sensor according to claim 4 , wherein the conductive polymer layer comprises a color polymer.
6. The image sensor according to claim 4 , further comprising a transparent conducting electrode on the carbon nanotubes.
7. An image sensor comprising:
a substrate including transistor circuitry;
a lower interconnection on the substrate connected to the transistor circuitry;
carbon nanotubes on the lower interconnection;
a conductive polymer layer coated on the carbon nanotubes; and
a silicon-based conductive layer contacting the conductive polymer coated carbon nanotubes.
8. The image sensor according to claim 7 , wherein the carbon nanotubes are doped with a second conductive-type material.
9. The image sensor according to claim 8 , wherein the Si-based conductive layer contacting the conductive polymer coated carbon nanotubes is of a first conductive-type and is disposed below the carbon nanotubes.
10. The image sensor according to claim 7 , wherein the carbon nanotubes are doped with a first conductive-type material.
11. The image sensor according to claim 10 , wherein the Si-based conductive layer contacting the conductive polymer coated carbon nanotubes is of a second conductive-type and is disposed on the carbon nanotubes.
12. The image sensor according to claim 7 , wherein the conductive polymer layer comprises a color polymer.
13. The image sensor according to claim 7 , further comprising a transparent conducting electrode on the carbon nanotubes.