Method for manufacturing photoelectric conversion device
To form a microcrystalline semiconductor with high quality which can be directly formed at equal to or less than 500° C. over a large substrate with high productivity without decreasing a deposition rate. In addition, to provide a photoelectric conversion device which employs the microcrystalline semiconductor as a photoelectric conversion layer. A reactive gas containing helium is supplied to a treatment chamber which is surrounded by a plurality of juxtaposed waveguides and a wall, the pressure in the treatment chamber is maintained at an atmospheric pressure or a subatmospheric pressure, microwave is supplied to a space sandwiched between the juxtaposed waveguides to generate plasma, and a photoelectric conversion layer of a microcrystalline semiconductor is deposited over a substrate which is placed in the treatment chamber.
1. A method for manufacturing a photoelectric conversion device comprising:
supplying a reactive gas containing helium to a treatment chamber having a plurality of waveguides which are juxtaposed so as to be projected in a comb-shape; and
forming a photoelectric conversion layer of a microcrystalline semiconductor over a substrate placed in the treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the treatment chamber at equal to or greater than 1×10 2 Pa and equal to or less than 1×10 5 Pa.
2. The method for manufacturing a photoelectric conversion device according to claim 1 ,
wherein the plasma has an electron density of equal to or greater than 1×10 11 cm −3 and equal to or less than 1×10 13 cm −3 , and an electron temperature of equal to or greater than 0.2 eV and equal to or less than 2.0 eV.
3. The method for manufacturing a photoelectric conversion device according to claim 1 ,
wherein the plurality of waveguides are juxtaposed for one substrate,
wherein a slit is placed on a side of each of the plurality of waveguides which faces another waveguide,
wherein the microwave is supplied through the slit, and
wherein the plasma is generated by the microwave.
4. The method for manufacturing a photoelectric conversion device according to claim 1 ,
wherein the reactive gas contains helium and a semiconductor material gas,
wherein a plurality of nozzles is provided in the treatment chamber, and
wherein the helium is made to flow from one of the plurality of nozzles and the semiconductor material gas is made to flow from another one of the plurality of nozzles.
5. The method for manufacturing a photoelectric conversion device according to claim 1 , wherein the photoelectric conversion device is a photovoltaic system.
6. A method for manufacturing a photoelectric conversion device comprising:
supplying a reactive gas containing helium to a first treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape;
forming a first photoelectric conversion layer of a microcrystalline semiconductor over a substrate placed in the first treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the first treatment chamber at equal to or greater than 1×10 2 Pa and equal to or less than 1×10 5 Pa;
transferring the substrate from the first treatment chamber into a second treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape without exposing the substrate to air;
supplying a reactive gas containing helium to the second treatment chamber;
forming a second photoelectric conversion layer of a microcrystalline semiconductor over the first photoelectric conversion layer placed in the second treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the second treatment chamber at equal to or greater than 1×10 2 Pa and equal to or less than 1×10 5 Pa;
transferring the substrate from the second treatment chamber into a third treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape without exposing the substrate to air;
supplying a reactive gas containing helium to the third treatment chamber; and
forming a third photoelectric conversion layer of a microcrystalline semiconductor over the second photoelectric conversion layer placed in the third treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the third treatment chamber at equal to or greater than 1×10 2 Pa and equal to or less than 1×10 5 Pa.
7. The method for manufacturing a photoelectric conversion device according to claim 6 ,
wherein the plasma has an electron density of equal to or greater than 1×10 11 cm −3 and equal to or less than 1×10 13 cm −3 , and an electron temperature of equal to or greater than 0.2 eV and equal to or less than 2.0 eV.
8. The method for manufacturing a photoelectric conversion device according to claim 6 ,
wherein the plurality of waveguides is juxtaposed for one substrate,
wherein a slit is placed on a side of each of the plurality of waveguides which faces another waveguide,
wherein the microwave is supplied through the slit, and
wherein the plasma is generated by the microwave.
9. The method for manufacturing a photoelectric conversion device according to claim 6 ,
wherein the reactive gas contains helium and a semiconductor material gas,
wherein a plurality of nozzles is provided in each of the first to third treatment chambers, and
wherein the helium is made to flow from one of the plurality of nozzles and the semiconductor material gas is made to flow from another one of the plurality of nozzles in each of the first to third treatment chambers.
10. The method for manufacturing a photoelectric conversion device according to claim 6 , wherein the photoelectric conversion device is a photovoltaic system.
11. A method for manufacturing a semiconductor device comprising:
supplying a reactive gas containing helium to a treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape; and
forming a semiconductor layer of a microcrystalline semiconductor over a substrate placed in the treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the treatment chamber at equal to or greater than 1×10 2 Pa and equal to or less than 1×10 5 Pa.
12. The method for manufacturing a semiconductor device according to claim 11 ,
wherein the plasma has an electron density of equal to or greater than 1×10 11 cm −3 and equal to or less than 1×10 13 cm 3 , and an electron temperature of equal to or greater than 0.2 eV and equal to or less than 2.0 eV.
13. The method for manufacturing a semiconductor device according to claim 11 ,
wherein the plurality of waveguides is juxtaposed for one substrate,
wherein a slit is placed on a side of each of the plurality of waveguides which faces another waveguide,
wherein the microwave is supplied through the slit, and
wherein the plasma is generated by the microwave.
14. The method for manufacturing a semiconductor device according to claim 11 ,
wherein the reactive gas contains helium and a semiconductor material gas,
wherein a plurality of nozzles is provided in the treatment chamber, and
wherein the helium is made to flow from one of the plurality of nozzles and the semiconductor material gas is made to flow from another one of the plurality of nozzles.
15. The method for manufacturing a semiconductor device according to claim 11 , wherein the semiconductor device is a photovoltaic system.
16. A method for manufacturing a semiconductor device comprising:
supplying a reactive gas containing helium to a first treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape;
forming a first semiconductor layer of a microcrystalline semiconductor over a substrate placed in the first treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the first treatment chamber at equal to or greater than 1×10 2 Pa and equal to or less than 1×10 5 Pa;
transferring the substrate from the first treatment chamber into a second treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape without exposing the substrate to air;
supplying a reactive gas containing helium to the second treatment chamber;
forming a second semiconductor layer of a microcrystalline semiconductor over the first semiconductor layer placed in the second treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the second treatment chamber at equal to or greater than 1×10 2 Pa and equal to or less than 1×10 5 Pa;
transferring the substrate from the second treatment chamber into a third treatment chamber having a plurality of waveguides which is juxtaposed so as to be projected in a comb-shape without exposing the substrate to air;
supplying a reactive gas containing helium to the third treatment chamber; and
forming a third semiconductor layer of a microcrystalline semiconductor over the second semiconductor layer placed in the third treatment chamber by supplying a microwave to space sandwiched between the plurality of waveguides to generate plasma, while maintaining a pressure in the third treatment chamber at equal to or greater than 1×10 2 Pa and equal to or less than 1×10 5 Pa.
17. The method for manufacturing a semiconductor device according to claim 16 ,
wherein the plasma has an electron density of equal to or greater than 1×10 11 cm −3 and equal to or less than 1×10 13 cm −3 , and an electron temperature of equal to or greater than 0.2 eV and equal to or less than 2.0 eV.
18. The method for manufacturing a semiconductor device according to claim 16 ,
wherein the plurality of waveguides is juxtaposed for one substrate,
wherein a slit is placed on a side of each of the plurality of waveguides which faces another waveguide,
wherein the microwave is supplied through the slit, and
wherein the plasma is generated by the microwave.
19. The method for manufacturing a semiconductor device according to claim 16 ,
wherein the reactive gas contains helium and a semiconductor material gas,
wherein a plurality of nozzles are provided in each of the first to third treatment chambers, and
wherein the helium is made to flow from one of the plurality of nozzles and the semiconductor material gas is made to flow from another one of the plurality of nozzles in each of the first to third treatment chambers.
20. The method for manufacturing a semiconductor device according to claim 16 , wherein the semiconductor device is a photovoltaic system.