Method for forming microlenses of different curvatures and fabricating process of solid-state image sensor

1. A method for forming microlenses of different curvatures, comprising:

providing a substrate having at least a first and a second areas different in height;

forming a transparent photosensitive layer having a planar surface on the substrate;

patterning the photosensitive layer into at least two islands of different thicknesses respectively over the first area and the second area; and

heating and softening the at least two islands to form at least two microlenses of different curvatures respectively over the first and the second areas, wherein the higher an area is, the smaller the curvature of the corresponding microlens is.

2. The method of claim 1 , which is applied to a fabricating process of a solid-state image sensor that includes first to third pixel sensors respectively sensing a first, a second and a third color lights and respectively having a first, a second and a third maximal absorption regions different in depth in the substrate, wherein

the first to third color lights can be combined to obtain full colors; and

the substrate has three areas of three different heights respectively over the first, the second and the third maximal absorption regions, such that three islands of three different thicknesses are defined to form three microlenses of three different curvatures respectively over the first, the second and the third maximal absorption regions,

wherein the deeper a maximal absorption region is, the higher the corresponding area is, such that the three microlenses are formed with three different curvatures capable of focusing the first to third color lights respectively to the first, the second and the third maximal absorption regions.

3. The method of claim 2 , wherein the three areas of three different heights are caused by three color filters of the first to third color lights that have three different thicknesses on a planar surface.

4. The method of claim 2 , wherein the first to third color lights are red light, green light and blue light, respectively.

5. The method of claim 4 , wherein

the solid-state image sensor comprises a CMOS image sensor;

the first to third maximal absorption regions are respectively at depths D 1 , D 2 and D 3 in the substrate satisfying an inequality of “D 1 >D 2 >D 3 ”;

the three microlenses includes a first, a second and a third microlenses respectively having curvatures C 1 , C 2 and C 3 satisfying an inequality of “C 1 >C 2 >C 3 ”; and

the first, the second and the third microlenses are respectively formed over the third, the second and the first maximal absorption regions of the blue light, the green light and the red light, respectively.

6. A method for fabricating a solid-state image sensor that includes pixel sensors of first to third color lights that can be combined to obtain full colors, comprising:

providing a substrate having a planar upper surface, wherein first to third maximal absorption regions of the first to third color lights are different in depth in the substrate;

forming first to third color filters of the first to third color lights respectively over the first, the second and the third maximal absorption regions, wherein the first to third color filters are different from each other in thickness;

forming a transparent photosensitive layer having a planar surface on the substrate;

patterning the photosensitive layer into three islands of three different thickness respectively over the first, the second and the third color filters; and

heating and softening the three islands to form three microlenses of three different curvatures respectively over the first, the second and the third color filters, wherein

the color filters are formed in a manner that the deeper a maximal absorption region is, the thicker the corresponding color filter is, such that the three microlenses are formed with three different curvatures capable of focusing the first to third color lights respectively to the first, the second and the third maximal absorption regions.

7. The method of claim 6 , wherein the first to third color lights are red light, green light and blue light, respectively.

8. The method of claim 7 , wherein

the solid-state image sensor comprises a CMOS image sensor;

the first color filter is thicker than the second color filter and the second color filter thicker than the third color filter;

the first to third maximal absorption regions are respectively at depths D 1 , D 2 and D 3 in the substrate satisfying an inequality of “D 1 >D 2 >D 3 ”;

the three microlenses includes a first, a second and a third microlenses respectively having curvatures C 1 , C 2 and C 3 satisfying an inequality of “C 1 >C 2 >C 3 ”; and

the first, the second and the third microlenses are respectively formed over the third, the second and the first maximal absorption regions of the blue light, the green light and the red light, respectively.

9. The method of claim 6 , wherein the planar upper surface of the substrate is an upper surface of a passivation layer.

10. The method of claim 9 , wherein the passivation layer comprises SiO2.