Light or radiation detector manufacturing method
View Patent ↗In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.
1. A method of manufacturing a light or radiation detector having a polycrystalline semiconductor film for generating electric charges upon incidence of light or radiation, and a supporting substrate for supporting the polycrystalline semiconductor film to be laminated thereon, crystal grains of the semiconductor film being formed continuously and without crystal grain boundaries present in a direction of thickness, wherein at a time of forming the semiconductor film, the semiconductor film is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with the supporting substrate, and the semiconductor film continues to be formed on the supporting substrate by vapor deposition, the semiconductor film being formed by a proximity sublimation method which places, close to each other, a deposition source and the supporting substrate or a dummy substrate to deposit sublimate of the deposition source on a surface of the substrate, thereby forming the semiconductor film that should be on the supporting substrates or the semiconductor film that should be formed on the dummy substrate.
2. The method of manufacturing a light or radiation detector according to claim 1 , wherein the dummy substrate is formed of the same material as the supporting substrate for replacement.
3. The method of manufacturing a light or radiation detector according to claim 1 , wherein the dummy substrate is formed in the same size as the supporting substrate for replacement.
4. The method of manufacturing a light or radiation detector according to claim 1 , wherein the supporting substrate is a common electrode for bias voltage application.
5. The method of manufacturing a light or radiation detector according to claim 1 , wherein the supporting substrate and the dummy substrate are placed in one chamber beforehand, and the supporting substrate is retracted to a retracting place in the chamber when forming the semiconductor film on the dummy substrate.
6. The method of manufacturing a light or radiation detector according to claim 2 , wherein the supporting substrate is a common electrode for bias voltage application.
7. The method of manufacturing a light or radiation detector according to claim 2 , wherein the supporting substrate and the dummy substrate are placed in one chamber beforehand, and the supporting substrate is retracted to a retracting place in the chamber when forming the semiconductor film on the dummy substrate.
8. The method of manufacturing a light or radiation detector according to claim 3 , wherein the supporting substrate is a common electrode for bias voltage application.
9. The method of manufacturing a light or radiation detector according to claim 3 , wherein the supporting substrate and the dummy substrate are placed in one chamber beforehand, and the supporting substrate is retracted to a retracting place in the chamber when forming the semiconductor film on the dummy substrate.
10. The method of manufacturing a light or radiation detector according to claim 4 , wherein the supporting substrate and the dummy substrate are placed in one chamber beforehand, and the supporting substrate is retracted to a retracting place in the chamber when forming the semiconductor film on the dummy substrate.