Method and apparatus for high speed silicon optical modulation using PN diode

1. An apparatus comprising:

an optical waveguide having a rib region and a slab region, the optical waveguide further having first and second doped semiconductor regions of opposite doping types, the first and second regions adjoining each other at a junction, the junction extending in two different directions along two peripheral sides of the waveguide in the rib region of the waveguide;

a first higher doped semiconductor region outside an optical path of the optical waveguide, an inner portion of the first higher doped region adjoining and coupled to the first doped region of the optical waveguide, the first higher doped region having a higher doping concentration than a doping concentration within the optical path of the optical waveguide; and

a second higher doped semiconductor region outside an optical path of the optical waveguide, an inner portion of the second higher doped region adjoining and coupled to the second doped region of the optical waveguide, the second higher doped region having a higher doping concentration than a doping concentration within the optical path of the optical waveguide.

2. The apparatus of claim 1 , wherein the optical waveguide has a slab region and a rib region and wherein the junction extends across the slab region in one of the two different directions and into the rib region in the other of the two different directions.

3. The apparatus of claim 2 , wherein the first doped semiconductor region substantially fills the waveguide.

4. The apparatus of claim 2 wherein the two different directions are horizontally and vertically through the waveguide, wherein horizontal is defined with respect to a surface of a substrate upon which the waveguide is formed.

5. The apparatus of claim 1 , wherein the two different directions are perpendicular to each other.

6. The apparatus of claim 1 , wherein the junction surrounds the periphery of the waveguide on at least two sides.

7. The apparatus of claim 1 , wherein the junction extends across a top and a side of the waveguide.

8. The apparatus of claim 1 , wherein the junction is Z-shaped.

9. The apparatus of claim 1 , further comprising a depletion region within the waveguide at an interface between the first and second doped regions, the first and second doped regions of the waveguide having respective doping concentrations such that the depletion region is present without a drive voltage externally applied to the optical waveguide.

10. The apparatus of claim 9 , wherein a size of the depletion region at the interface between the first and second regions of the optical waveguide is increased to more completely fill the waveguide in response to a drive voltage externally applied to the optical waveguide.

11. The apparatus of claim 1 , further comprising a first buffer disposed along the optical waveguide and adjoining an outer portion of the first higher doped region, the first contact having an outer portion adjoining the first buffer, wherein an outer portion of the second higher doped region adjoins the first buffer, and the first contact has an outer portion adjoining the first buffer.

12. The apparatus of claim 1 , further comprising:

a first contact having an inner portion adjoining and coupled to the first higher doped region; and

a second contact having an inner portion adjoining and coupled to the second higher doped region.

13. A method comprising:

projecting an optical beam through an optical waveguide having a rib region and a slab region, the optical waveguide further having first and second doped semiconductor regions of opposite doping types, the first and second regions adjoining each other at a junction, the junction extending in two different directions along two peripheral sides of the waveguide in the rib region of the waveguide;

driving the first and second doped semiconductor regions through a first higher doped semiconductor region outside an optical path of the optical waveguide, an inner portion of the first higher doped region adjoining and coupled to the first doped region of the optical waveguide, the first higher doped region having a higher doping concentration than a doping concentration within the optical path of the optical waveguide and a second higher doped semiconductor region outside an optical path of the optical waveguide, an inner portion of the second higher doped region adjoining and coupled to the second doped region of the optical waveguide, the second higher doped region having a higher doping concentration than a doping concentration within the optical path of the optical waveguide to modulate the phase of the optical beam through the waveguide.

14. The method of claim 13 , wherein the optical waveguide has a region and a slab region and wherein the junction extends horizontally across the rib region in one direction and vertically in the other direction into the slab region.

15. The method of claim 14 , wherein the two different directions comprise horizontally and vertically through the waveguide, wherein horizontal is defined with respect to a surface of a substrate upon which the waveguide is formed.

16. The method of claim 13 wherein driving comprises applying a drive voltage to cause a size of a depletion region to alternately more and less completely fill the waveguide at an interface between the first and second doped regions, the first and second doped regions of the waveguide having respective doping concentrations such that the depletion region is present without a drive voltage externally applied to the optical waveguide.

17. A system, comprising:

an optical transmitter to generate an optical beam;

an optical receiver optically coupled to receive the optical beam;

an optical device optically coupled between the optical transmitter and the optical receiver, the optical device including an optical phase modulator optically coupled to an optical fiber to modulate a phase of the optical beam, the optical phase modulator including:

an optical waveguide having a rib region and a slab region, the optical waveguide further having adjoining first and second doped semiconductor regions, the first and second regions having opposite doping types, the first doped region extending in two different directions along two peripheral sides of the waveguide in the rib region of the waveguide to form a carrier depletion zone through the optical waveguide;

a first higher doped semiconductor region outside an optical path of the optical waveguide, an inner portion of the first higher doped region adjoining and coupled to the first doped region of the optical waveguide, the first higher doped region having a higher doping concentration than a doping concentration within the optical path of the optical waveguide;

a second higher doped semiconductor region outside an optical path of the optical waveguide, an inner portion of the second higher doped region adjoining and coupled to the second doped region of the optical waveguide, the second higher doped region having a higher doping concentration than a doping concentration within the optical path of the optical waveguide.

18. The system of claim 17 , wherein a size of the depletion region is adjusted in response to an external drive voltage applied to the first and second doped regions.